New Extraction Technique of In-Gap Electronic-State Spectrum Based on Time-Resolved Charge Extraction

[Image: see text] The in-gap electronic state (trap state) is an important factor that determines the photovoltaic performance of solar cells. In this article, we put forward a new technique for extracting the density of trap state (DOS(T)) distribution based on the time-resolved charge extraction (TRCE) experiment result. Based on strict derivation, we find that when the TRCE result is linear, the extracted DOS(T) distribution is exponential type and vice versa. Compared to the approach given by Wang et al., the method introduced in this paper is more accurate and reliable. Compared to the approach based on the space charge-limited current (SCLC) experiment result, our method needs less computation.