Proposal for an electrostrictive logic device with the epitaxial oxide heterostructure

The possible use of electrostrictive materials for information processing devices has been widely discussed because it could allow low-power logic operation by overcoming the fundamental limit of subthreshold swing greater than 60 mV/decade in conventional MOSFETs. However, existing proposals for el...

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Detalles Bibliográficos
Autores principales: Anam, Md. Khirul, Gopalakrishnan, Pratheek, Sebastian, Ann, Ahn, Ethan C.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2020
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7471687/
https://www.ncbi.nlm.nih.gov/pubmed/32884047
http://dx.doi.org/10.1038/s41598-020-71631-5

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7471687/
https://www.ncbi.nlm.nih.gov/pubmed/32884047
http://dx.doi.org/10.1038/s41598-020-71631-5

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