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Proposal for an electrostrictive logic device with the epitaxial oxide heterostructure
The possible use of electrostrictive materials for information processing devices has been widely discussed because it could allow low-power logic operation by overcoming the fundamental limit of subthreshold swing greater than 60 mV/decade in conventional MOSFETs. However, existing proposals for el...
| Autores principales: | , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Nature Publishing Group UK
2020
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7471687/ https://www.ncbi.nlm.nih.gov/pubmed/32884047 http://dx.doi.org/10.1038/s41598-020-71631-5 |