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Semiconducting to metallic transition with outstanding optoelectronic properties of CsSnCl(3) perovskite under pressure
Inorganic non-toxic metal halide perovskites have taken the dominant place in commercialization of the optoelectronic devices. The first principles simulation has been executed with the help of density functional theory to investigate the structural, optical, electronic and mechanical properties of...
Autores principales: | , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group UK
2020
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7474070/ https://www.ncbi.nlm.nih.gov/pubmed/32887907 http://dx.doi.org/10.1038/s41598-020-71223-3 |
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author | Islam, Jakiul Hossain, A. K. M. Akther |
author_facet | Islam, Jakiul Hossain, A. K. M. Akther |
author_sort | Islam, Jakiul |
collection | PubMed |
description | Inorganic non-toxic metal halide perovskites have taken the dominant place in commercialization of the optoelectronic devices. The first principles simulation has been executed with the help of density functional theory to investigate the structural, optical, electronic and mechanical properties of non-toxic CsSnCl(3) metal halide under various hydrostatic pressures up to 40 GPa. The analysis of optical functions displays that the absorption edge of CsSnCl(3) perovskite is shifted remarkably toward the low energy region (red shift) with enhanced pressure. The absorptivity, conductivity and the value of dielectric constant also increases with the applied pressure. The investigation of mechanical properties reveals CsSnCl(3) perovskite is mechanically stable as well as highly ductile and the ductility is increased with increasing pressure. The investigation of electronic properties shows semiconducting to metallic transition occurs in CsSnCl(3) under elevated pressure. The Physics behind all these changes under hydrostatic pressure has been analyzed and explained in details within the available Scientific theory. |
format | Online Article Text |
id | pubmed-7474070 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2020 |
publisher | Nature Publishing Group UK |
record_format | MEDLINE/PubMed |
spelling | pubmed-74740702020-09-08 Semiconducting to metallic transition with outstanding optoelectronic properties of CsSnCl(3) perovskite under pressure Islam, Jakiul Hossain, A. K. M. Akther Sci Rep Article Inorganic non-toxic metal halide perovskites have taken the dominant place in commercialization of the optoelectronic devices. The first principles simulation has been executed with the help of density functional theory to investigate the structural, optical, electronic and mechanical properties of non-toxic CsSnCl(3) metal halide under various hydrostatic pressures up to 40 GPa. The analysis of optical functions displays that the absorption edge of CsSnCl(3) perovskite is shifted remarkably toward the low energy region (red shift) with enhanced pressure. The absorptivity, conductivity and the value of dielectric constant also increases with the applied pressure. The investigation of mechanical properties reveals CsSnCl(3) perovskite is mechanically stable as well as highly ductile and the ductility is increased with increasing pressure. The investigation of electronic properties shows semiconducting to metallic transition occurs in CsSnCl(3) under elevated pressure. The Physics behind all these changes under hydrostatic pressure has been analyzed and explained in details within the available Scientific theory. Nature Publishing Group UK 2020-09-04 /pmc/articles/PMC7474070/ /pubmed/32887907 http://dx.doi.org/10.1038/s41598-020-71223-3 Text en © The Author(s) 2020 Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/. |
spellingShingle | Article Islam, Jakiul Hossain, A. K. M. Akther Semiconducting to metallic transition with outstanding optoelectronic properties of CsSnCl(3) perovskite under pressure |
title | Semiconducting to metallic transition with outstanding optoelectronic properties of CsSnCl(3) perovskite under pressure |
title_full | Semiconducting to metallic transition with outstanding optoelectronic properties of CsSnCl(3) perovskite under pressure |
title_fullStr | Semiconducting to metallic transition with outstanding optoelectronic properties of CsSnCl(3) perovskite under pressure |
title_full_unstemmed | Semiconducting to metallic transition with outstanding optoelectronic properties of CsSnCl(3) perovskite under pressure |
title_short | Semiconducting to metallic transition with outstanding optoelectronic properties of CsSnCl(3) perovskite under pressure |
title_sort | semiconducting to metallic transition with outstanding optoelectronic properties of cssncl(3) perovskite under pressure |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7474070/ https://www.ncbi.nlm.nih.gov/pubmed/32887907 http://dx.doi.org/10.1038/s41598-020-71223-3 |
work_keys_str_mv | AT islamjakiul semiconductingtometallictransitionwithoutstandingoptoelectronicpropertiesofcssncl3perovskiteunderpressure AT hossainakmakther semiconductingtometallictransitionwithoutstandingoptoelectronicpropertiesofcssncl3perovskiteunderpressure |