Cargando…

Semiconducting to metallic transition with outstanding optoelectronic properties of CsSnCl(3) perovskite under pressure

Inorganic non-toxic metal halide perovskites have taken the dominant place in commercialization of the optoelectronic devices. The first principles simulation has been executed with the help of density functional theory to investigate the structural, optical, electronic and mechanical properties of...

Descripción completa

Detalles Bibliográficos
Autores principales: Islam, Jakiul, Hossain, A. K. M. Akther
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2020
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7474070/
https://www.ncbi.nlm.nih.gov/pubmed/32887907
http://dx.doi.org/10.1038/s41598-020-71223-3
_version_ 1783579275387994112
author Islam, Jakiul
Hossain, A. K. M. Akther
author_facet Islam, Jakiul
Hossain, A. K. M. Akther
author_sort Islam, Jakiul
collection PubMed
description Inorganic non-toxic metal halide perovskites have taken the dominant place in commercialization of the optoelectronic devices. The first principles simulation has been executed with the help of density functional theory to investigate the structural, optical, electronic and mechanical properties of non-toxic CsSnCl(3) metal halide under various hydrostatic pressures up to 40 GPa. The analysis of optical functions displays that the absorption edge of CsSnCl(3) perovskite is shifted remarkably toward the low energy region (red shift) with enhanced pressure. The absorptivity, conductivity and the value of dielectric constant also increases with the applied pressure. The investigation of mechanical properties reveals CsSnCl(3) perovskite is mechanically stable as well as highly ductile and the ductility is increased with increasing pressure. The investigation of electronic properties shows semiconducting to metallic transition occurs in CsSnCl(3) under elevated pressure. The Physics behind all these changes under hydrostatic pressure has been analyzed and explained in details within the available Scientific theory.
format Online
Article
Text
id pubmed-7474070
institution National Center for Biotechnology Information
language English
publishDate 2020
publisher Nature Publishing Group UK
record_format MEDLINE/PubMed
spelling pubmed-74740702020-09-08 Semiconducting to metallic transition with outstanding optoelectronic properties of CsSnCl(3) perovskite under pressure Islam, Jakiul Hossain, A. K. M. Akther Sci Rep Article Inorganic non-toxic metal halide perovskites have taken the dominant place in commercialization of the optoelectronic devices. The first principles simulation has been executed with the help of density functional theory to investigate the structural, optical, electronic and mechanical properties of non-toxic CsSnCl(3) metal halide under various hydrostatic pressures up to 40 GPa. The analysis of optical functions displays that the absorption edge of CsSnCl(3) perovskite is shifted remarkably toward the low energy region (red shift) with enhanced pressure. The absorptivity, conductivity and the value of dielectric constant also increases with the applied pressure. The investigation of mechanical properties reveals CsSnCl(3) perovskite is mechanically stable as well as highly ductile and the ductility is increased with increasing pressure. The investigation of electronic properties shows semiconducting to metallic transition occurs in CsSnCl(3) under elevated pressure. The Physics behind all these changes under hydrostatic pressure has been analyzed and explained in details within the available Scientific theory. Nature Publishing Group UK 2020-09-04 /pmc/articles/PMC7474070/ /pubmed/32887907 http://dx.doi.org/10.1038/s41598-020-71223-3 Text en © The Author(s) 2020 Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.
spellingShingle Article
Islam, Jakiul
Hossain, A. K. M. Akther
Semiconducting to metallic transition with outstanding optoelectronic properties of CsSnCl(3) perovskite under pressure
title Semiconducting to metallic transition with outstanding optoelectronic properties of CsSnCl(3) perovskite under pressure
title_full Semiconducting to metallic transition with outstanding optoelectronic properties of CsSnCl(3) perovskite under pressure
title_fullStr Semiconducting to metallic transition with outstanding optoelectronic properties of CsSnCl(3) perovskite under pressure
title_full_unstemmed Semiconducting to metallic transition with outstanding optoelectronic properties of CsSnCl(3) perovskite under pressure
title_short Semiconducting to metallic transition with outstanding optoelectronic properties of CsSnCl(3) perovskite under pressure
title_sort semiconducting to metallic transition with outstanding optoelectronic properties of cssncl(3) perovskite under pressure
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7474070/
https://www.ncbi.nlm.nih.gov/pubmed/32887907
http://dx.doi.org/10.1038/s41598-020-71223-3
work_keys_str_mv AT islamjakiul semiconductingtometallictransitionwithoutstandingoptoelectronicpropertiesofcssncl3perovskiteunderpressure
AT hossainakmakther semiconductingtometallictransitionwithoutstandingoptoelectronicpropertiesofcssncl3perovskiteunderpressure