Cargando…

Molecular Beam Epitaxy of Layered Group III Metal Chalcogenides on GaAs(001) Substrates

Development of molecular beam epitaxy (MBE) of two-dimensional (2D) layered materials is an inevitable step in realizing novel devices based on 2D materials and heterostructures. However, due to existence of numerous polytypes and occurrence of additional phases, the synthesis of 2D films remains a...

Descripción completa

Detalles Bibliográficos
Autores principales: Sorokin, Sergey V., Avdienko, Pavel S., Sedova, Irina V., Kirilenko, Demid A., Davydov, Valery Yu., Komkov, Oleg S., Firsov, Dmitrii D., Ivanov, Sergey V.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2020
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7475857/
https://www.ncbi.nlm.nih.gov/pubmed/32764315
http://dx.doi.org/10.3390/ma13163447
_version_ 1783579600769515520
author Sorokin, Sergey V.
Avdienko, Pavel S.
Sedova, Irina V.
Kirilenko, Demid A.
Davydov, Valery Yu.
Komkov, Oleg S.
Firsov, Dmitrii D.
Ivanov, Sergey V.
author_facet Sorokin, Sergey V.
Avdienko, Pavel S.
Sedova, Irina V.
Kirilenko, Demid A.
Davydov, Valery Yu.
Komkov, Oleg S.
Firsov, Dmitrii D.
Ivanov, Sergey V.
author_sort Sorokin, Sergey V.
collection PubMed
description Development of molecular beam epitaxy (MBE) of two-dimensional (2D) layered materials is an inevitable step in realizing novel devices based on 2D materials and heterostructures. However, due to existence of numerous polytypes and occurrence of additional phases, the synthesis of 2D films remains a difficult task. This paper reports on MBE growth of GaSe, InSe, and GaTe layers and related heterostructures on GaAs(001) substrates by using a Se valve cracking cell and group III metal effusion cells. The sophisticated self-consistent analysis of X-ray diffraction, transmission electron microscopy, and Raman spectroscopy data was used to establish the correlation between growth conditions, formed polytypes and additional phases, surface morphology and crystalline structure of the III–VI 2D layers. The photoluminescence and Raman spectra of the grown films are discussed in detail to confirm or correct the structural findings. The requirement of a high growth temperature for the fabrication of optically active 2D layers was confirmed for all materials. However, this also facilitated the strong diffusion of group III metals in III–VI and III–VI/II–VI heterostructures. In particular, the strong In diffusion into the underlying ZnSe layers was observed in ZnSe/InSe/ZnSe quantum well structures, and the Ga diffusion into the top InSe layer grown at ~450 °C was confirmed by the Raman data in the InSe/GaSe heterostructures. The results on fabrication of the GaSe/GaTe quantum well structures are presented as well, although the choice of optimum growth temperatures to make them optically active is still a challenge.
format Online
Article
Text
id pubmed-7475857
institution National Center for Biotechnology Information
language English
publishDate 2020
publisher MDPI
record_format MEDLINE/PubMed
spelling pubmed-74758572020-09-17 Molecular Beam Epitaxy of Layered Group III Metal Chalcogenides on GaAs(001) Substrates Sorokin, Sergey V. Avdienko, Pavel S. Sedova, Irina V. Kirilenko, Demid A. Davydov, Valery Yu. Komkov, Oleg S. Firsov, Dmitrii D. Ivanov, Sergey V. Materials (Basel) Article Development of molecular beam epitaxy (MBE) of two-dimensional (2D) layered materials is an inevitable step in realizing novel devices based on 2D materials and heterostructures. However, due to existence of numerous polytypes and occurrence of additional phases, the synthesis of 2D films remains a difficult task. This paper reports on MBE growth of GaSe, InSe, and GaTe layers and related heterostructures on GaAs(001) substrates by using a Se valve cracking cell and group III metal effusion cells. The sophisticated self-consistent analysis of X-ray diffraction, transmission electron microscopy, and Raman spectroscopy data was used to establish the correlation between growth conditions, formed polytypes and additional phases, surface morphology and crystalline structure of the III–VI 2D layers. The photoluminescence and Raman spectra of the grown films are discussed in detail to confirm or correct the structural findings. The requirement of a high growth temperature for the fabrication of optically active 2D layers was confirmed for all materials. However, this also facilitated the strong diffusion of group III metals in III–VI and III–VI/II–VI heterostructures. In particular, the strong In diffusion into the underlying ZnSe layers was observed in ZnSe/InSe/ZnSe quantum well structures, and the Ga diffusion into the top InSe layer grown at ~450 °C was confirmed by the Raman data in the InSe/GaSe heterostructures. The results on fabrication of the GaSe/GaTe quantum well structures are presented as well, although the choice of optimum growth temperatures to make them optically active is still a challenge. MDPI 2020-08-05 /pmc/articles/PMC7475857/ /pubmed/32764315 http://dx.doi.org/10.3390/ma13163447 Text en © 2020 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).
spellingShingle Article
Sorokin, Sergey V.
Avdienko, Pavel S.
Sedova, Irina V.
Kirilenko, Demid A.
Davydov, Valery Yu.
Komkov, Oleg S.
Firsov, Dmitrii D.
Ivanov, Sergey V.
Molecular Beam Epitaxy of Layered Group III Metal Chalcogenides on GaAs(001) Substrates
title Molecular Beam Epitaxy of Layered Group III Metal Chalcogenides on GaAs(001) Substrates
title_full Molecular Beam Epitaxy of Layered Group III Metal Chalcogenides on GaAs(001) Substrates
title_fullStr Molecular Beam Epitaxy of Layered Group III Metal Chalcogenides on GaAs(001) Substrates
title_full_unstemmed Molecular Beam Epitaxy of Layered Group III Metal Chalcogenides on GaAs(001) Substrates
title_short Molecular Beam Epitaxy of Layered Group III Metal Chalcogenides on GaAs(001) Substrates
title_sort molecular beam epitaxy of layered group iii metal chalcogenides on gaas(001) substrates
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7475857/
https://www.ncbi.nlm.nih.gov/pubmed/32764315
http://dx.doi.org/10.3390/ma13163447
work_keys_str_mv AT sorokinsergeyv molecularbeamepitaxyoflayeredgroupiiimetalchalcogenidesongaas001substrates
AT avdienkopavels molecularbeamepitaxyoflayeredgroupiiimetalchalcogenidesongaas001substrates
AT sedovairinav molecularbeamepitaxyoflayeredgroupiiimetalchalcogenidesongaas001substrates
AT kirilenkodemida molecularbeamepitaxyoflayeredgroupiiimetalchalcogenidesongaas001substrates
AT davydovvaleryyu molecularbeamepitaxyoflayeredgroupiiimetalchalcogenidesongaas001substrates
AT komkovolegs molecularbeamepitaxyoflayeredgroupiiimetalchalcogenidesongaas001substrates
AT firsovdmitriid molecularbeamepitaxyoflayeredgroupiiimetalchalcogenidesongaas001substrates
AT ivanovsergeyv molecularbeamepitaxyoflayeredgroupiiimetalchalcogenidesongaas001substrates