Molecular Beam Epitaxy of Layered Group III Metal Chalcogenides on GaAs(001) Substrates

Development of molecular beam epitaxy (MBE) of two-dimensional (2D) layered materials is an inevitable step in realizing novel devices based on 2D materials and heterostructures. However, due to existence of numerous polytypes and occurrence of additional phases, the synthesis of 2D films remains a...

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Detalles Bibliográficos
Autores principales: Sorokin, Sergey V., Avdienko, Pavel S., Sedova, Irina V., Kirilenko, Demid A., Davydov, Valery Yu., Komkov, Oleg S., Firsov, Dmitrii D., Ivanov, Sergey V.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2020
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7475857/
https://www.ncbi.nlm.nih.gov/pubmed/32764315
http://dx.doi.org/10.3390/ma13163447

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7475857/
https://www.ncbi.nlm.nih.gov/pubmed/32764315
http://dx.doi.org/10.3390/ma13163447

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