Resistive Switching of GaAs Oxide Nanostructures

The paper presents the results of experimental studies of the influence of the local anodic oxidation control parameters on the geometric parameters of oxide nanoscale structures (ONS) and profiled nanoscale structures (PNS) on the surface of epitaxial structures of silicon doped gallium arsenide with an impurity concentration of 5 × 10(17) cm(−3). X-ray photoelectron spectroscopy measurements showed that GaAs oxide consists of oxide phases Ga(2)O(3) and As(2)O(3), and the thickness of the Ga(2)O(3) layer is 2–3 times greater than the thickness of As(2)O(3) area—i.e., the oxidized GaAs region consists mainly of Ga(2)O(3). The experimental studies of the influence of ONS thickness on the resistive switching effect were obtained. An increase in the ONS thickness from 0.8 ± 0.3 to 7.6 ± 0.6 nm leads to an increase in the switching voltage Uset from 2.8 ± 0.3 to 6.8 ± 0.9 V. The results can be used in the development of technological processes for the manufacturing of nano-electronic elements, such as ReRAM, as well as a high-efficiency quantum dot laser.