Single-photon emission from isolated monolayer islands of InGaN

We identify and characterize a novel type of quantum emitter formed from InGaN monolayer islands grown using molecular beam epitaxy and further isolated via the fabrication of an array of nanopillar structures. Detailed optical analysis of the characteristic emission spectrum from the monolayer isla...

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Detalles Bibliográficos
Autores principales: Sun, Xiaoxiao, Wang, Ping, Wang, Tao, Chen, Ling, Chen, Zhaoying, Gao, Kang, Aoki, Tomoyuki, Li, Mo, Zhang, Jian, Schulz, Tobias, Albrecht, Martin, Ge, Weikun, Arakawa, Yasuhiko, Shen, Bo, Holmes, Mark, Wang, Xinqiang
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2020
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7481781/
https://www.ncbi.nlm.nih.gov/pubmed/32963771
http://dx.doi.org/10.1038/s41377-020-00393-6
Descripción
Sumario:We identify and characterize a novel type of quantum emitter formed from InGaN monolayer islands grown using molecular beam epitaxy and further isolated via the fabrication of an array of nanopillar structures. Detailed optical analysis of the characteristic emission spectrum from the monolayer islands is performed, and the main transmission is shown to act as a bright, stable, and fast single-photon emitter with a wavelength of ~400 nm.

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