Cargando…
Single-photon emission from isolated monolayer islands of InGaN
We identify and characterize a novel type of quantum emitter formed from InGaN monolayer islands grown using molecular beam epitaxy and further isolated via the fabrication of an array of nanopillar structures. Detailed optical analysis of the characteristic emission spectrum from the monolayer isla...
Autores principales: | Sun, Xiaoxiao, Wang, Ping, Wang, Tao, Chen, Ling, Chen, Zhaoying, Gao, Kang, Aoki, Tomoyuki, Li, Mo, Zhang, Jian, Schulz, Tobias, Albrecht, Martin, Ge, Weikun, Arakawa, Yasuhiko, Shen, Bo, Holmes, Mark, Wang, Xinqiang |
---|---|
Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group UK
2020
|
Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7481781/ https://www.ncbi.nlm.nih.gov/pubmed/32963771 http://dx.doi.org/10.1038/s41377-020-00393-6 |
Ejemplares similares
-
Exciton emission of quasi-2D InGaN in GaN matrix grown by molecular beam epitaxy
por: Ma, Dingyu, et al.
Publicado: (2017) -
High‐Mobility Two‐Dimensional Electron Gas at InGaN/InN Heterointerface Grown by Molecular Beam Epitaxy
por: Wang, Tao, et al.
Publicado: (2018) -
Blue light emission from the heterostructured ZnO/InGaN/GaN
por: Wang, Ti, et al.
Publicado: (2013) -
Advantages of InGaN–GaN–InGaN Delta Barriers for InGaN-Based Laser Diodes
por: Cheng, Liwen, et al.
Publicado: (2021) -
The effects of nanocavity and photonic crystal in InGaN/GaN nanorod LED arrays
por: Jiao, Qianqian, et al.
Publicado: (2016)