High-speed III-V nanowire photodetector monolithically integrated on Si

Direct epitaxial growth of III-Vs on silicon for optical emitters and detectors is an elusive goal. Nanowires enable the local integration of high-quality III-V material, but advanced devices are hampered by their high-aspect ratio vertical geometry. Here, we demonstrate the in-plane monolithic inte...

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Detalles Bibliográficos
Autores principales: Mauthe, Svenja, Baumgartner, Yannick, Sousa, Marilyne, Ding, Qian, Rossell, Marta D., Schenk, Andreas, Czornomaz, Lukas, Moselund, Kirsten E.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2020
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7486389/
https://www.ncbi.nlm.nih.gov/pubmed/32917898
http://dx.doi.org/10.1038/s41467-020-18374-z

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7486389/
https://www.ncbi.nlm.nih.gov/pubmed/32917898
http://dx.doi.org/10.1038/s41467-020-18374-z

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