Data for direct chemical deposition of PbS on chemical vapor deposition grown-graphene for high performance photovoltaic infrared photo-detectors

Over the past decades, graphene has attracted much attention from the scientific community due to its broad applications in the optoelectronics industries [1]. Owing to graphene's high transmission and high electrical conductivity, diverse functional materials/graphene hybridized heterostructures and interfaces are under extensive investigation to satisfy the increasing interest in the need for bendable, flexible and high performance optoelectronic devices [2]. Due to the good atomic lattice structure of graphene, varying heterostructures have been formed by depositing different functional materials directly on graphene [3], [4], [5]. We fabricated a vertical photovoltaic type G/PbS/Ti device by making use of the Ti/PbS Schottky junction and discussed the photocurrent transient characteristics. Lead sulfide (PbS) was deposited directly on large area CVD (Chemical vapor deposition) graphene by CBD (Chemical bath deposition). Temperature dependent photocurrent spectra of our G/PbS/Ti photovoltaic devices were measured by a Fourier transformed infrared (FTIR) set-up. In this paper, we present the experimental procedures and the raw experimental data for the direct chemical deposition of PbS on CVD-graphene for high performance photovoltaic infrared photo-detectors. The manuscript is already available [6].