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Selective Homoepitaxial Growth of ZnO Layers on c(+)-Surface by Solvothermal Reaction in Water–Ethylene Glycol Solvent
[Image: see text] Solvothermal deposition of ZnO layers on the c(±)-surfaces of ZnO single crystal substrates in a water–ethylene glycol solvent was investigated. Homoepitaxial growth of nanoparticulate layers was observed on the c(+)-surface. The manner of nanoparticle deposition on the c(+)-surfac...
Autores principales: | , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
American Chemical Society
2020
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Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7496011/ https://www.ncbi.nlm.nih.gov/pubmed/32954203 http://dx.doi.org/10.1021/acsomega.0c03738 |
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author | Saito, Noriko Haneda, Hajime Sakaguchi, Isao |
author_facet | Saito, Noriko Haneda, Hajime Sakaguchi, Isao |
author_sort | Saito, Noriko |
collection | PubMed |
description | [Image: see text] Solvothermal deposition of ZnO layers on the c(±)-surfaces of ZnO single crystal substrates in a water–ethylene glycol solvent was investigated. Homoepitaxial growth of nanoparticulate layers was observed on the c(+)-surface. The manner of nanoparticle deposition on the c(+)-surface was similar to that of spherical particles precipitated in the solution, in that both grew through the oriented attachment of small particles during the early growth stage. The growth of the nanoparticulate film on the c(−)-surface was much slower than that on the c(+)-surface. After aging, the top surface of the film on the c(+)-surface transformed into a layer of pyramid-like particles so that the base of the pyramids was directed toward the surface. In contrast, randomly oriented pyramidal particles covered the c(−)-surface. Ostwald ripening through dissolution–recrystallization transformed the nanoparticles into pyramid-shaped particles in the latter stage when they were in contact with the solution. The faster growth on the c(+)-surface than on the c(−)-surface and the pyramidal shape of the particles with c(+)-basal plane deposited on the c(±)-surfaces after aging confirmed that the growth of the c(+)-plane was promoted, whereas the growth of {101̅0} and c(−)-planes was inhibited in this solution. |
format | Online Article Text |
id | pubmed-7496011 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2020 |
publisher | American Chemical Society |
record_format | MEDLINE/PubMed |
spelling | pubmed-74960112020-09-18 Selective Homoepitaxial Growth of ZnO Layers on c(+)-Surface by Solvothermal Reaction in Water–Ethylene Glycol Solvent Saito, Noriko Haneda, Hajime Sakaguchi, Isao ACS Omega [Image: see text] Solvothermal deposition of ZnO layers on the c(±)-surfaces of ZnO single crystal substrates in a water–ethylene glycol solvent was investigated. Homoepitaxial growth of nanoparticulate layers was observed on the c(+)-surface. The manner of nanoparticle deposition on the c(+)-surface was similar to that of spherical particles precipitated in the solution, in that both grew through the oriented attachment of small particles during the early growth stage. The growth of the nanoparticulate film on the c(−)-surface was much slower than that on the c(+)-surface. After aging, the top surface of the film on the c(+)-surface transformed into a layer of pyramid-like particles so that the base of the pyramids was directed toward the surface. In contrast, randomly oriented pyramidal particles covered the c(−)-surface. Ostwald ripening through dissolution–recrystallization transformed the nanoparticles into pyramid-shaped particles in the latter stage when they were in contact with the solution. The faster growth on the c(+)-surface than on the c(−)-surface and the pyramidal shape of the particles with c(+)-basal plane deposited on the c(±)-surfaces after aging confirmed that the growth of the c(+)-plane was promoted, whereas the growth of {101̅0} and c(−)-planes was inhibited in this solution. American Chemical Society 2020-09-02 /pmc/articles/PMC7496011/ /pubmed/32954203 http://dx.doi.org/10.1021/acsomega.0c03738 Text en Copyright © 2020 American Chemical Society This is an open access article published under an ACS AuthorChoice License (http://pubs.acs.org/page/policy/authorchoice_termsofuse.html) , which permits copying and redistribution of the article or any adaptations for non-commercial purposes. |
spellingShingle | Saito, Noriko Haneda, Hajime Sakaguchi, Isao Selective Homoepitaxial Growth of ZnO Layers on c(+)-Surface by Solvothermal Reaction in Water–Ethylene Glycol Solvent |
title | Selective Homoepitaxial Growth of ZnO Layers on c(+)-Surface by Solvothermal Reaction in Water–Ethylene
Glycol Solvent |
title_full | Selective Homoepitaxial Growth of ZnO Layers on c(+)-Surface by Solvothermal Reaction in Water–Ethylene
Glycol Solvent |
title_fullStr | Selective Homoepitaxial Growth of ZnO Layers on c(+)-Surface by Solvothermal Reaction in Water–Ethylene
Glycol Solvent |
title_full_unstemmed | Selective Homoepitaxial Growth of ZnO Layers on c(+)-Surface by Solvothermal Reaction in Water–Ethylene
Glycol Solvent |
title_short | Selective Homoepitaxial Growth of ZnO Layers on c(+)-Surface by Solvothermal Reaction in Water–Ethylene
Glycol Solvent |
title_sort | selective homoepitaxial growth of zno layers on c(+)-surface by solvothermal reaction in water–ethylene
glycol solvent |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7496011/ https://www.ncbi.nlm.nih.gov/pubmed/32954203 http://dx.doi.org/10.1021/acsomega.0c03738 |
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