Enhanced UV Emission of GaN Nanowires Functionalized by Wider Band Gap Solution-Processed p-MnO Quantum Dots

[Image: see text] GaN-based UV light-emitting devices suffer from low efficiency. To mitigate this issue, we hybridized GaN nanowires (NWs) grown on Si substrates by plasma-assisted molecular beam epitaxy with solution-processed p-type MnO quantum dots (QDs) characterized by a wider band gap (∼5 eV)...

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Detalles Bibliográficos
Autores principales: Almalawi, Dhaifallah, Lopatin, Sergei, Mitra, Somak, Flemban, Tahani, Siladie, Alexandra-Madalina, Gayral, Bruno, Daudin, Bruno, Roqan, Iman S.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2020
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7497627/
https://www.ncbi.nlm.nih.gov/pubmed/32623885
http://dx.doi.org/10.1021/acsami.0c07029

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7497627/
https://www.ncbi.nlm.nih.gov/pubmed/32623885
http://dx.doi.org/10.1021/acsami.0c07029

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