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Microscopic Manipulation of Ferroelectric Domains in SnSe Monolayers at Room Temperature
[Image: see text] Two-dimensional (2D) van der Waals ferroelectrics provide an unprecedented architectural freedom for the creation of artificial multiferroics and nonvolatile electronic devices based on vertical and coplanar heterojunctions of 2D ferroic materials. Nevertheless, controlled microsco...
Autores principales: | , , , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
American Chemical Society
2020
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Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7498149/ https://www.ncbi.nlm.nih.gov/pubmed/32809837 http://dx.doi.org/10.1021/acs.nanolett.0c02357 |
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author | Chang, Kai Küster, Felix Miller, Brandon J. Ji, Jing-Rong Zhang, Jia-Lu Sessi, Paolo Barraza-Lopez, Salvador Parkin, Stuart S. P. |
author_facet | Chang, Kai Küster, Felix Miller, Brandon J. Ji, Jing-Rong Zhang, Jia-Lu Sessi, Paolo Barraza-Lopez, Salvador Parkin, Stuart S. P. |
author_sort | Chang, Kai |
collection | PubMed |
description | [Image: see text] Two-dimensional (2D) van der Waals ferroelectrics provide an unprecedented architectural freedom for the creation of artificial multiferroics and nonvolatile electronic devices based on vertical and coplanar heterojunctions of 2D ferroic materials. Nevertheless, controlled microscopic manipulation of ferroelectric domains is still rare in monolayer-thick 2D ferroelectrics with in-plane polarization. Here we report the discovery of robust ferroelectricity with a critical temperature close to 400 K in SnSe monolayer plates grown on graphene and the demonstration of controlled room-temperature ferroelectric domain manipulation by applying appropriate bias voltage pulses to the tip of a scanning tunneling microscope (STM). This study shows that STM is a powerful tool for detecting and manipulating the microscopic domain structures in 2D ferroelectric monolayers, which are difficult for conventional approaches such as piezoresponse force microscopy, thus facilitating the hunt for other 2D ferroelectric monolayers with in-plane polarization with important technological applications. |
format | Online Article Text |
id | pubmed-7498149 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2020 |
publisher | American Chemical Society |
record_format | MEDLINE/PubMed |
spelling | pubmed-74981492020-09-18 Microscopic Manipulation of Ferroelectric Domains in SnSe Monolayers at Room Temperature Chang, Kai Küster, Felix Miller, Brandon J. Ji, Jing-Rong Zhang, Jia-Lu Sessi, Paolo Barraza-Lopez, Salvador Parkin, Stuart S. P. Nano Lett [Image: see text] Two-dimensional (2D) van der Waals ferroelectrics provide an unprecedented architectural freedom for the creation of artificial multiferroics and nonvolatile electronic devices based on vertical and coplanar heterojunctions of 2D ferroic materials. Nevertheless, controlled microscopic manipulation of ferroelectric domains is still rare in monolayer-thick 2D ferroelectrics with in-plane polarization. Here we report the discovery of robust ferroelectricity with a critical temperature close to 400 K in SnSe monolayer plates grown on graphene and the demonstration of controlled room-temperature ferroelectric domain manipulation by applying appropriate bias voltage pulses to the tip of a scanning tunneling microscope (STM). This study shows that STM is a powerful tool for detecting and manipulating the microscopic domain structures in 2D ferroelectric monolayers, which are difficult for conventional approaches such as piezoresponse force microscopy, thus facilitating the hunt for other 2D ferroelectric monolayers with in-plane polarization with important technological applications. American Chemical Society 2020-08-18 2020-09-09 /pmc/articles/PMC7498149/ /pubmed/32809837 http://dx.doi.org/10.1021/acs.nanolett.0c02357 Text en Copyright © 2020 American Chemical Society This is an open access article published under a Creative Commons Attribution (CC-BY) License (http://pubs.acs.org/page/policy/authorchoice_ccby_termsofuse.html) , which permits unrestricted use, distribution and reproduction in any medium, provided the author and source are cited. |
spellingShingle | Chang, Kai Küster, Felix Miller, Brandon J. Ji, Jing-Rong Zhang, Jia-Lu Sessi, Paolo Barraza-Lopez, Salvador Parkin, Stuart S. P. Microscopic Manipulation of Ferroelectric Domains in SnSe Monolayers at Room Temperature |
title | Microscopic Manipulation of Ferroelectric Domains
in SnSe Monolayers at Room Temperature |
title_full | Microscopic Manipulation of Ferroelectric Domains
in SnSe Monolayers at Room Temperature |
title_fullStr | Microscopic Manipulation of Ferroelectric Domains
in SnSe Monolayers at Room Temperature |
title_full_unstemmed | Microscopic Manipulation of Ferroelectric Domains
in SnSe Monolayers at Room Temperature |
title_short | Microscopic Manipulation of Ferroelectric Domains
in SnSe Monolayers at Room Temperature |
title_sort | microscopic manipulation of ferroelectric domains
in snse monolayers at room temperature |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7498149/ https://www.ncbi.nlm.nih.gov/pubmed/32809837 http://dx.doi.org/10.1021/acs.nanolett.0c02357 |
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