Cargando…

Microscopic Manipulation of Ferroelectric Domains in SnSe Monolayers at Room Temperature

[Image: see text] Two-dimensional (2D) van der Waals ferroelectrics provide an unprecedented architectural freedom for the creation of artificial multiferroics and nonvolatile electronic devices based on vertical and coplanar heterojunctions of 2D ferroic materials. Nevertheless, controlled microsco...

Descripción completa

Detalles Bibliográficos
Autores principales: Chang, Kai, Küster, Felix, Miller, Brandon J., Ji, Jing-Rong, Zhang, Jia-Lu, Sessi, Paolo, Barraza-Lopez, Salvador, Parkin, Stuart S. P.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2020
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7498149/
https://www.ncbi.nlm.nih.gov/pubmed/32809837
http://dx.doi.org/10.1021/acs.nanolett.0c02357
_version_ 1783583450358349824
author Chang, Kai
Küster, Felix
Miller, Brandon J.
Ji, Jing-Rong
Zhang, Jia-Lu
Sessi, Paolo
Barraza-Lopez, Salvador
Parkin, Stuart S. P.
author_facet Chang, Kai
Küster, Felix
Miller, Brandon J.
Ji, Jing-Rong
Zhang, Jia-Lu
Sessi, Paolo
Barraza-Lopez, Salvador
Parkin, Stuart S. P.
author_sort Chang, Kai
collection PubMed
description [Image: see text] Two-dimensional (2D) van der Waals ferroelectrics provide an unprecedented architectural freedom for the creation of artificial multiferroics and nonvolatile electronic devices based on vertical and coplanar heterojunctions of 2D ferroic materials. Nevertheless, controlled microscopic manipulation of ferroelectric domains is still rare in monolayer-thick 2D ferroelectrics with in-plane polarization. Here we report the discovery of robust ferroelectricity with a critical temperature close to 400 K in SnSe monolayer plates grown on graphene and the demonstration of controlled room-temperature ferroelectric domain manipulation by applying appropriate bias voltage pulses to the tip of a scanning tunneling microscope (STM). This study shows that STM is a powerful tool for detecting and manipulating the microscopic domain structures in 2D ferroelectric monolayers, which are difficult for conventional approaches such as piezoresponse force microscopy, thus facilitating the hunt for other 2D ferroelectric monolayers with in-plane polarization with important technological applications.
format Online
Article
Text
id pubmed-7498149
institution National Center for Biotechnology Information
language English
publishDate 2020
publisher American Chemical Society
record_format MEDLINE/PubMed
spelling pubmed-74981492020-09-18 Microscopic Manipulation of Ferroelectric Domains in SnSe Monolayers at Room Temperature Chang, Kai Küster, Felix Miller, Brandon J. Ji, Jing-Rong Zhang, Jia-Lu Sessi, Paolo Barraza-Lopez, Salvador Parkin, Stuart S. P. Nano Lett [Image: see text] Two-dimensional (2D) van der Waals ferroelectrics provide an unprecedented architectural freedom for the creation of artificial multiferroics and nonvolatile electronic devices based on vertical and coplanar heterojunctions of 2D ferroic materials. Nevertheless, controlled microscopic manipulation of ferroelectric domains is still rare in monolayer-thick 2D ferroelectrics with in-plane polarization. Here we report the discovery of robust ferroelectricity with a critical temperature close to 400 K in SnSe monolayer plates grown on graphene and the demonstration of controlled room-temperature ferroelectric domain manipulation by applying appropriate bias voltage pulses to the tip of a scanning tunneling microscope (STM). This study shows that STM is a powerful tool for detecting and manipulating the microscopic domain structures in 2D ferroelectric monolayers, which are difficult for conventional approaches such as piezoresponse force microscopy, thus facilitating the hunt for other 2D ferroelectric monolayers with in-plane polarization with important technological applications. American Chemical Society 2020-08-18 2020-09-09 /pmc/articles/PMC7498149/ /pubmed/32809837 http://dx.doi.org/10.1021/acs.nanolett.0c02357 Text en Copyright © 2020 American Chemical Society This is an open access article published under a Creative Commons Attribution (CC-BY) License (http://pubs.acs.org/page/policy/authorchoice_ccby_termsofuse.html) , which permits unrestricted use, distribution and reproduction in any medium, provided the author and source are cited.
spellingShingle Chang, Kai
Küster, Felix
Miller, Brandon J.
Ji, Jing-Rong
Zhang, Jia-Lu
Sessi, Paolo
Barraza-Lopez, Salvador
Parkin, Stuart S. P.
Microscopic Manipulation of Ferroelectric Domains in SnSe Monolayers at Room Temperature
title Microscopic Manipulation of Ferroelectric Domains in SnSe Monolayers at Room Temperature
title_full Microscopic Manipulation of Ferroelectric Domains in SnSe Monolayers at Room Temperature
title_fullStr Microscopic Manipulation of Ferroelectric Domains in SnSe Monolayers at Room Temperature
title_full_unstemmed Microscopic Manipulation of Ferroelectric Domains in SnSe Monolayers at Room Temperature
title_short Microscopic Manipulation of Ferroelectric Domains in SnSe Monolayers at Room Temperature
title_sort microscopic manipulation of ferroelectric domains in snse monolayers at room temperature
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7498149/
https://www.ncbi.nlm.nih.gov/pubmed/32809837
http://dx.doi.org/10.1021/acs.nanolett.0c02357
work_keys_str_mv AT changkai microscopicmanipulationofferroelectricdomainsinsnsemonolayersatroomtemperature
AT kusterfelix microscopicmanipulationofferroelectricdomainsinsnsemonolayersatroomtemperature
AT millerbrandonj microscopicmanipulationofferroelectricdomainsinsnsemonolayersatroomtemperature
AT jijingrong microscopicmanipulationofferroelectricdomainsinsnsemonolayersatroomtemperature
AT zhangjialu microscopicmanipulationofferroelectricdomainsinsnsemonolayersatroomtemperature
AT sessipaolo microscopicmanipulationofferroelectricdomainsinsnsemonolayersatroomtemperature
AT barrazalopezsalvador microscopicmanipulationofferroelectricdomainsinsnsemonolayersatroomtemperature
AT parkinstuartsp microscopicmanipulationofferroelectricdomainsinsnsemonolayersatroomtemperature