Recent developments in graphene based field effect transistors

This paper presents a comprehensive survey on the recent developments in Graphene Field Effect Transistor (G-FET), considering various aspects such as fabrication, modelling and simulation tools and applications especially in sensors, highlighting the future directions. Complying with the Moore’s law, to increase the transistor density of an Integrated Circuit, new alternate materials for fabrication have been tried, instead of silicon due to its limitations in reducing transistor dimensions. Graphene, one such material, proves to be a suitable alternate for silicon due to the factors like superior carrier mobility and very high trans-conductance gain, etc and G-FET is becoming the most suitable choice for high-speed analog VLSI, RF, and bio- sensor circuits.