Strange Attractors Generated by Multiple-Valued Static Memory Cell with Polynomial Approximation of Resonant Tunneling Diodes

This paper brings analysis of the multiple-valued memory system (MVMS) composed by a pair of the resonant tunneling diodes (RTD). Ampere-voltage characteristic (AVC) of both diodes is approximated in operational voltage range as common in practice: by polynomial scalar function. Mathematical model o...

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Detalles Bibliográficos
Autor principal: Petrzela, Jiri
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2018
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7513227/
https://www.ncbi.nlm.nih.gov/pubmed/33265786
http://dx.doi.org/10.3390/e20090697

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7513227/
https://www.ncbi.nlm.nih.gov/pubmed/33265786
http://dx.doi.org/10.3390/e20090697

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