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Strange Attractors Generated by Multiple-Valued Static Memory Cell with Polynomial Approximation of Resonant Tunneling Diodes
This paper brings analysis of the multiple-valued memory system (MVMS) composed by a pair of the resonant tunneling diodes (RTD). Ampere-voltage characteristic (AVC) of both diodes is approximated in operational voltage range as common in practice: by polynomial scalar function. Mathematical model o...
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
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MDPI
2018
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| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7513227/ https://www.ncbi.nlm.nih.gov/pubmed/33265786 http://dx.doi.org/10.3390/e20090697 |