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Temperature Dependence of G and D’ Phonons in Monolayer to Few-Layer Graphene with Vacancies
The defects into the hexagonal network of a sp(2)-hybridized carbon atom have been demonstrated to have a significant influence on intrinsic properties of graphene systems. In this paper, we presented a study of temperature-dependent Raman spectra of G peak and D’ band at low temperatures from 78 to...
Autores principales: | , , , , , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Springer US
2020
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7527399/ https://www.ncbi.nlm.nih.gov/pubmed/32997231 http://dx.doi.org/10.1186/s11671-020-03414-w |
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author | Yang, Mingming Wang, Longlong Qiao, Xiaofen Liu, Yi Liu, Yufan Shi, Yafang Wu, Hongli Liang, Baolai Li, Xiaoli Zhao, Xiaohui |
author_facet | Yang, Mingming Wang, Longlong Qiao, Xiaofen Liu, Yi Liu, Yufan Shi, Yafang Wu, Hongli Liang, Baolai Li, Xiaoli Zhao, Xiaohui |
author_sort | Yang, Mingming |
collection | PubMed |
description | The defects into the hexagonal network of a sp(2)-hybridized carbon atom have been demonstrated to have a significant influence on intrinsic properties of graphene systems. In this paper, we presented a study of temperature-dependent Raman spectra of G peak and D’ band at low temperatures from 78 to 318 K in defective monolayer to few-layer graphene induced by ion C+ bombardment under the determination of vacancy uniformity. Defects lead to the increase of the negative temperature coefficient of G peak, with a value almost identical to that of D’ band. However, the variation of frequency and linewidth of G peak with layer number is contrary to D’ band. It derives from the related electron-phonon interaction in G and D’ phonon in the disorder-induced Raman scattering process. Our results are helpful to understand the mechanism of temperature-dependent phonons in graphene-based materials and provide valuable information on thermal properties of defects for the application of graphene-based devices. |
format | Online Article Text |
id | pubmed-7527399 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2020 |
publisher | Springer US |
record_format | MEDLINE/PubMed |
spelling | pubmed-75273992020-10-19 Temperature Dependence of G and D’ Phonons in Monolayer to Few-Layer Graphene with Vacancies Yang, Mingming Wang, Longlong Qiao, Xiaofen Liu, Yi Liu, Yufan Shi, Yafang Wu, Hongli Liang, Baolai Li, Xiaoli Zhao, Xiaohui Nanoscale Res Lett Nano Express The defects into the hexagonal network of a sp(2)-hybridized carbon atom have been demonstrated to have a significant influence on intrinsic properties of graphene systems. In this paper, we presented a study of temperature-dependent Raman spectra of G peak and D’ band at low temperatures from 78 to 318 K in defective monolayer to few-layer graphene induced by ion C+ bombardment under the determination of vacancy uniformity. Defects lead to the increase of the negative temperature coefficient of G peak, with a value almost identical to that of D’ band. However, the variation of frequency and linewidth of G peak with layer number is contrary to D’ band. It derives from the related electron-phonon interaction in G and D’ phonon in the disorder-induced Raman scattering process. Our results are helpful to understand the mechanism of temperature-dependent phonons in graphene-based materials and provide valuable information on thermal properties of defects for the application of graphene-based devices. Springer US 2020-09-30 /pmc/articles/PMC7527399/ /pubmed/32997231 http://dx.doi.org/10.1186/s11671-020-03414-w Text en © The Author(s) 2020 Open AccessThis article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons licence, and indicate if changes were made. The images or other third party material in this article are included in the article's Creative Commons licence, unless indicated otherwise in a credit line to the material. If material is not included in the article's Creative Commons licence and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this licence, visit http://creativecommons.org/licenses/by/4.0/. |
spellingShingle | Nano Express Yang, Mingming Wang, Longlong Qiao, Xiaofen Liu, Yi Liu, Yufan Shi, Yafang Wu, Hongli Liang, Baolai Li, Xiaoli Zhao, Xiaohui Temperature Dependence of G and D’ Phonons in Monolayer to Few-Layer Graphene with Vacancies |
title | Temperature Dependence of G and D’ Phonons in Monolayer to Few-Layer Graphene with Vacancies |
title_full | Temperature Dependence of G and D’ Phonons in Monolayer to Few-Layer Graphene with Vacancies |
title_fullStr | Temperature Dependence of G and D’ Phonons in Monolayer to Few-Layer Graphene with Vacancies |
title_full_unstemmed | Temperature Dependence of G and D’ Phonons in Monolayer to Few-Layer Graphene with Vacancies |
title_short | Temperature Dependence of G and D’ Phonons in Monolayer to Few-Layer Graphene with Vacancies |
title_sort | temperature dependence of g and d’ phonons in monolayer to few-layer graphene with vacancies |
topic | Nano Express |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7527399/ https://www.ncbi.nlm.nih.gov/pubmed/32997231 http://dx.doi.org/10.1186/s11671-020-03414-w |
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