Investigations on the Optical Properties of InGaN/GaN Multiple Quantum Wells with Varying GaN Cap Layer Thickness

Three InGaN/GaN MQWs samples with varying GaN cap layer thickness were grown by metalorganic chemical vapor deposition (MOCVD) to investigate the optical properties. We found that a thicker cap layer is more effective in preventing the evaporation of the In composition in the InGaN quantum well laye...

Descripción completa

Detalles Bibliográficos
Autores principales: Wang, Xiaowei, Liang, Feng, Zhao, Degang, Liu, Zongshun, Zhu, Jianjun, Yang, Jing
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2020
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7530159/
https://www.ncbi.nlm.nih.gov/pubmed/33001341
http://dx.doi.org/10.1186/s11671-020-03420-y

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7530159/
https://www.ncbi.nlm.nih.gov/pubmed/33001341
http://dx.doi.org/10.1186/s11671-020-03420-y

Ejemplares similares