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Thermal neutron transmutation doping of GaN semiconductors
High quality Ge doping of GaN is demonstrated using primarily thermal neutrons for the first time. In this study, GaN was doped with Ge to concentrations from 10(16) Ge atoms/cm(3) to 10(18) Ge atoms/cm(3). The doping concentrations were measured using gamma-ray spectroscopy and confirmed using SIMS...
| Autores principales: | , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Nature Publishing Group UK
2020
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7530752/ https://www.ncbi.nlm.nih.gov/pubmed/33004847 http://dx.doi.org/10.1038/s41598-020-72862-2 |