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Controlling the electronic and physical coupling on dielectric thin films
Ultrathin dielectric/insulating films on metals are often used as decoupling layers to allow for the study of the electronic properties of adsorbed molecules without electronic interference from the underlying metal substrate. However, the presence of such decoupling layers may effectively change th...
Autores principales: | , , , , , , , , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Beilstein-Institut
2020
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7537406/ https://www.ncbi.nlm.nih.gov/pubmed/33083197 http://dx.doi.org/10.3762/bjnano.11.132 |
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author | Hurdax, Philipp Hollerer, Michael Egger, Larissa Koller, Georg Yang, Xiaosheng Haags, Anja Soubatch, Serguei Tautz, Frank Stefan Richter, Mathias Gottwald, Alexander Puschnig, Peter Sterrer, Martin Ramsey, Michael G |
author_facet | Hurdax, Philipp Hollerer, Michael Egger, Larissa Koller, Georg Yang, Xiaosheng Haags, Anja Soubatch, Serguei Tautz, Frank Stefan Richter, Mathias Gottwald, Alexander Puschnig, Peter Sterrer, Martin Ramsey, Michael G |
author_sort | Hurdax, Philipp |
collection | PubMed |
description | Ultrathin dielectric/insulating films on metals are often used as decoupling layers to allow for the study of the electronic properties of adsorbed molecules without electronic interference from the underlying metal substrate. However, the presence of such decoupling layers may effectively change the electron donating properties of the substrate, for example, by lowering its work function and thus enhancing the charging of the molecular adsorbate layer through electron tunneling. Here, an experimental study of the charging of para-sexiphenyl (6P) on ultrathin MgO(100) films supported on Ag(100) is reported. By deliberately changing the work function of the MgO(100)/Ag(100) system, it is shown that the charge transfer (electronic coupling) into the 6P molecules can be controlled, and 6P monolayers with uncharged molecules (Schottky–Mott regime) and charged and uncharged molecules (Fermi level pinning regime) can be obtained. Furthermore, it was found that charge transfer and temperature strongly influence the orientation, conformation, and wetting behavior (physical coupling) of the 6P layers on the MgO(100) thin films. |
format | Online Article Text |
id | pubmed-7537406 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2020 |
publisher | Beilstein-Institut |
record_format | MEDLINE/PubMed |
spelling | pubmed-75374062020-10-19 Controlling the electronic and physical coupling on dielectric thin films Hurdax, Philipp Hollerer, Michael Egger, Larissa Koller, Georg Yang, Xiaosheng Haags, Anja Soubatch, Serguei Tautz, Frank Stefan Richter, Mathias Gottwald, Alexander Puschnig, Peter Sterrer, Martin Ramsey, Michael G Beilstein J Nanotechnol Full Research Paper Ultrathin dielectric/insulating films on metals are often used as decoupling layers to allow for the study of the electronic properties of adsorbed molecules without electronic interference from the underlying metal substrate. However, the presence of such decoupling layers may effectively change the electron donating properties of the substrate, for example, by lowering its work function and thus enhancing the charging of the molecular adsorbate layer through electron tunneling. Here, an experimental study of the charging of para-sexiphenyl (6P) on ultrathin MgO(100) films supported on Ag(100) is reported. By deliberately changing the work function of the MgO(100)/Ag(100) system, it is shown that the charge transfer (electronic coupling) into the 6P molecules can be controlled, and 6P monolayers with uncharged molecules (Schottky–Mott regime) and charged and uncharged molecules (Fermi level pinning regime) can be obtained. Furthermore, it was found that charge transfer and temperature strongly influence the orientation, conformation, and wetting behavior (physical coupling) of the 6P layers on the MgO(100) thin films. Beilstein-Institut 2020-10-01 /pmc/articles/PMC7537406/ /pubmed/33083197 http://dx.doi.org/10.3762/bjnano.11.132 Text en Copyright © 2020, Hurdax et al. https://creativecommons.org/licenses/by/4.0https://www.beilstein-journals.org/bjnano/termsThis is an Open Access article under the terms of the Creative Commons Attribution License (https://creativecommons.org/licenses/by/4.0). Please note that the reuse, redistribution and reproduction in particular requires that the authors and source are credited. The license is subject to the Beilstein Journal of Nanotechnology terms and conditions: (https://www.beilstein-journals.org/bjnano/terms) |
spellingShingle | Full Research Paper Hurdax, Philipp Hollerer, Michael Egger, Larissa Koller, Georg Yang, Xiaosheng Haags, Anja Soubatch, Serguei Tautz, Frank Stefan Richter, Mathias Gottwald, Alexander Puschnig, Peter Sterrer, Martin Ramsey, Michael G Controlling the electronic and physical coupling on dielectric thin films |
title | Controlling the electronic and physical coupling on dielectric thin films |
title_full | Controlling the electronic and physical coupling on dielectric thin films |
title_fullStr | Controlling the electronic and physical coupling on dielectric thin films |
title_full_unstemmed | Controlling the electronic and physical coupling on dielectric thin films |
title_short | Controlling the electronic and physical coupling on dielectric thin films |
title_sort | controlling the electronic and physical coupling on dielectric thin films |
topic | Full Research Paper |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7537406/ https://www.ncbi.nlm.nih.gov/pubmed/33083197 http://dx.doi.org/10.3762/bjnano.11.132 |
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