Cargando…

Double Negative Differential Resistance Device Based on Hafnium Disulfide/Pentacene Hybrid Structure

Recently, combinations of 2D van der Waals (2D vdW) materials and organic materials have attracted attention because they facilitate the formation of various heterojunctions with excellent interface quality owing to the absence of dangling bonds on their surface. In this work, a double negative diff...

Descripción completa

Detalles Bibliográficos
Autores principales: Jung, Kil‐Su, Heo, Keun, Kim, Min‐Je, Andreev, Maksim, Seo, Seunghwan, Kim, Jin‐Ok, Lim, Ji‐Hye, Kim, Kwan‐Ho, Kim, Sungho, Kim, Ki Seok, Yeom, Geun Yong, Cho, Jeong Ho, Park, Jin‐Hong
Formato: Online Artículo Texto
Lenguaje:English
Publicado: John Wiley and Sons Inc. 2020
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7539188/
https://www.ncbi.nlm.nih.gov/pubmed/33042740
http://dx.doi.org/10.1002/advs.202000991
_version_ 1783591013306073088
author Jung, Kil‐Su
Heo, Keun
Kim, Min‐Je
Andreev, Maksim
Seo, Seunghwan
Kim, Jin‐Ok
Lim, Ji‐Hye
Kim, Kwan‐Ho
Kim, Sungho
Kim, Ki Seok
Yeom, Geun Yong
Cho, Jeong Ho
Park, Jin‐Hong
author_facet Jung, Kil‐Su
Heo, Keun
Kim, Min‐Je
Andreev, Maksim
Seo, Seunghwan
Kim, Jin‐Ok
Lim, Ji‐Hye
Kim, Kwan‐Ho
Kim, Sungho
Kim, Ki Seok
Yeom, Geun Yong
Cho, Jeong Ho
Park, Jin‐Hong
author_sort Jung, Kil‐Su
collection PubMed
description Recently, combinations of 2D van der Waals (2D vdW) materials and organic materials have attracted attention because they facilitate the formation of various heterojunctions with excellent interface quality owing to the absence of dangling bonds on their surface. In this work, a double negative differential resistance (D‐NDR) characteristic of a hybrid 2D vdW/organic tunneling device consisting of a hafnium disulfide/pentacene heterojunction and a 3D pentacene resistor is reported. This D‐NDR phenomenon is achieved by precisely controlling an NDR peak voltage with the pentacene resistor and then integrating two distinct NDR devices in parallel. Then, the operation of a controllable‐gain amplifier configured with the D‐NDR device and an n‐channel transistor is demonstrated using the Cadence Spectre simulation platform. The proposed D‐NDR device technology based on a hybrid 2D vdW/organic heterostructure provides a scientific foundation for various circuit applications that require the NDR phenomenon.
format Online
Article
Text
id pubmed-7539188
institution National Center for Biotechnology Information
language English
publishDate 2020
publisher John Wiley and Sons Inc.
record_format MEDLINE/PubMed
spelling pubmed-75391882020-10-09 Double Negative Differential Resistance Device Based on Hafnium Disulfide/Pentacene Hybrid Structure Jung, Kil‐Su Heo, Keun Kim, Min‐Je Andreev, Maksim Seo, Seunghwan Kim, Jin‐Ok Lim, Ji‐Hye Kim, Kwan‐Ho Kim, Sungho Kim, Ki Seok Yeom, Geun Yong Cho, Jeong Ho Park, Jin‐Hong Adv Sci (Weinh) Full Papers Recently, combinations of 2D van der Waals (2D vdW) materials and organic materials have attracted attention because they facilitate the formation of various heterojunctions with excellent interface quality owing to the absence of dangling bonds on their surface. In this work, a double negative differential resistance (D‐NDR) characteristic of a hybrid 2D vdW/organic tunneling device consisting of a hafnium disulfide/pentacene heterojunction and a 3D pentacene resistor is reported. This D‐NDR phenomenon is achieved by precisely controlling an NDR peak voltage with the pentacene resistor and then integrating two distinct NDR devices in parallel. Then, the operation of a controllable‐gain amplifier configured with the D‐NDR device and an n‐channel transistor is demonstrated using the Cadence Spectre simulation platform. The proposed D‐NDR device technology based on a hybrid 2D vdW/organic heterostructure provides a scientific foundation for various circuit applications that require the NDR phenomenon. John Wiley and Sons Inc. 2020-08-05 /pmc/articles/PMC7539188/ /pubmed/33042740 http://dx.doi.org/10.1002/advs.202000991 Text en © 2020 The Authors. Published by Wiley‐VCH GmbH This is an open access article under the terms of the http://creativecommons.org/licenses/by/4.0/ License, which permits use, distribution and reproduction in any medium, provided the original work is properly cited.
spellingShingle Full Papers
Jung, Kil‐Su
Heo, Keun
Kim, Min‐Je
Andreev, Maksim
Seo, Seunghwan
Kim, Jin‐Ok
Lim, Ji‐Hye
Kim, Kwan‐Ho
Kim, Sungho
Kim, Ki Seok
Yeom, Geun Yong
Cho, Jeong Ho
Park, Jin‐Hong
Double Negative Differential Resistance Device Based on Hafnium Disulfide/Pentacene Hybrid Structure
title Double Negative Differential Resistance Device Based on Hafnium Disulfide/Pentacene Hybrid Structure
title_full Double Negative Differential Resistance Device Based on Hafnium Disulfide/Pentacene Hybrid Structure
title_fullStr Double Negative Differential Resistance Device Based on Hafnium Disulfide/Pentacene Hybrid Structure
title_full_unstemmed Double Negative Differential Resistance Device Based on Hafnium Disulfide/Pentacene Hybrid Structure
title_short Double Negative Differential Resistance Device Based on Hafnium Disulfide/Pentacene Hybrid Structure
title_sort double negative differential resistance device based on hafnium disulfide/pentacene hybrid structure
topic Full Papers
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7539188/
https://www.ncbi.nlm.nih.gov/pubmed/33042740
http://dx.doi.org/10.1002/advs.202000991
work_keys_str_mv AT jungkilsu doublenegativedifferentialresistancedevicebasedonhafniumdisulfidepentacenehybridstructure
AT heokeun doublenegativedifferentialresistancedevicebasedonhafniumdisulfidepentacenehybridstructure
AT kimminje doublenegativedifferentialresistancedevicebasedonhafniumdisulfidepentacenehybridstructure
AT andreevmaksim doublenegativedifferentialresistancedevicebasedonhafniumdisulfidepentacenehybridstructure
AT seoseunghwan doublenegativedifferentialresistancedevicebasedonhafniumdisulfidepentacenehybridstructure
AT kimjinok doublenegativedifferentialresistancedevicebasedonhafniumdisulfidepentacenehybridstructure
AT limjihye doublenegativedifferentialresistancedevicebasedonhafniumdisulfidepentacenehybridstructure
AT kimkwanho doublenegativedifferentialresistancedevicebasedonhafniumdisulfidepentacenehybridstructure
AT kimsungho doublenegativedifferentialresistancedevicebasedonhafniumdisulfidepentacenehybridstructure
AT kimkiseok doublenegativedifferentialresistancedevicebasedonhafniumdisulfidepentacenehybridstructure
AT yeomgeunyong doublenegativedifferentialresistancedevicebasedonhafniumdisulfidepentacenehybridstructure
AT chojeongho doublenegativedifferentialresistancedevicebasedonhafniumdisulfidepentacenehybridstructure
AT parkjinhong doublenegativedifferentialresistancedevicebasedonhafniumdisulfidepentacenehybridstructure