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Synaptic transistors with aluminum oxide dielectrics enabling full audio frequency range signal processing

The rapid evolution of the neuromorphic computing stimulates the search for novel brain-inspired electronic devices. Synaptic transistors are three-terminal devices that can mimic the chemical synapses while consuming low power, whereby an insulating dielectric layer physically separates output and...

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Autores principales: Bolat, Sami, Torres Sevilla, Galo, Mancinelli, Alessio, Gilshtein, Evgeniia, Sastre, Jordi, Cabas Vidani, Antonio, Bachmann, Dominik, Shorubalko, Ivan, Briand, Danick, Tiwari, Ayodhya N., Romanyuk, Yaroslav E.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2020
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7542445/
https://www.ncbi.nlm.nih.gov/pubmed/33028862
http://dx.doi.org/10.1038/s41598-020-73705-w
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author Bolat, Sami
Torres Sevilla, Galo
Mancinelli, Alessio
Gilshtein, Evgeniia
Sastre, Jordi
Cabas Vidani, Antonio
Bachmann, Dominik
Shorubalko, Ivan
Briand, Danick
Tiwari, Ayodhya N.
Romanyuk, Yaroslav E.
author_facet Bolat, Sami
Torres Sevilla, Galo
Mancinelli, Alessio
Gilshtein, Evgeniia
Sastre, Jordi
Cabas Vidani, Antonio
Bachmann, Dominik
Shorubalko, Ivan
Briand, Danick
Tiwari, Ayodhya N.
Romanyuk, Yaroslav E.
author_sort Bolat, Sami
collection PubMed
description The rapid evolution of the neuromorphic computing stimulates the search for novel brain-inspired electronic devices. Synaptic transistors are three-terminal devices that can mimic the chemical synapses while consuming low power, whereby an insulating dielectric layer physically separates output and input signals from each other. Appropriate choice of the dielectric is crucial in achieving a wide range of operation frequencies in these devices. Here we report synaptic transistors with printed aluminum oxide dielectrics, improving the operation frequency of solution-processed synaptic transistors by almost two orders of magnitude to 50 kHz. Fabricated devices, yielding synaptic response for all audio frequencies (20 Hz to 20 kHz), are employed in an acoustic response system to show the potential for future research in neuro-acoustic signal processing with printed oxide electronics.
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spelling pubmed-75424452020-10-14 Synaptic transistors with aluminum oxide dielectrics enabling full audio frequency range signal processing Bolat, Sami Torres Sevilla, Galo Mancinelli, Alessio Gilshtein, Evgeniia Sastre, Jordi Cabas Vidani, Antonio Bachmann, Dominik Shorubalko, Ivan Briand, Danick Tiwari, Ayodhya N. Romanyuk, Yaroslav E. Sci Rep Article The rapid evolution of the neuromorphic computing stimulates the search for novel brain-inspired electronic devices. Synaptic transistors are three-terminal devices that can mimic the chemical synapses while consuming low power, whereby an insulating dielectric layer physically separates output and input signals from each other. Appropriate choice of the dielectric is crucial in achieving a wide range of operation frequencies in these devices. Here we report synaptic transistors with printed aluminum oxide dielectrics, improving the operation frequency of solution-processed synaptic transistors by almost two orders of magnitude to 50 kHz. Fabricated devices, yielding synaptic response for all audio frequencies (20 Hz to 20 kHz), are employed in an acoustic response system to show the potential for future research in neuro-acoustic signal processing with printed oxide electronics. Nature Publishing Group UK 2020-10-07 /pmc/articles/PMC7542445/ /pubmed/33028862 http://dx.doi.org/10.1038/s41598-020-73705-w Text en © The Author(s) 2020 Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons licence, and indicate if changes were made. The images or other third party material in this article are included in the article's Creative Commons licence, unless indicated otherwise in a credit line to the material. If material is not included in the article's Creative Commons licence and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this licence, visit http://creativecommons.org/licenses/by/4.0/.
spellingShingle Article
Bolat, Sami
Torres Sevilla, Galo
Mancinelli, Alessio
Gilshtein, Evgeniia
Sastre, Jordi
Cabas Vidani, Antonio
Bachmann, Dominik
Shorubalko, Ivan
Briand, Danick
Tiwari, Ayodhya N.
Romanyuk, Yaroslav E.
Synaptic transistors with aluminum oxide dielectrics enabling full audio frequency range signal processing
title Synaptic transistors with aluminum oxide dielectrics enabling full audio frequency range signal processing
title_full Synaptic transistors with aluminum oxide dielectrics enabling full audio frequency range signal processing
title_fullStr Synaptic transistors with aluminum oxide dielectrics enabling full audio frequency range signal processing
title_full_unstemmed Synaptic transistors with aluminum oxide dielectrics enabling full audio frequency range signal processing
title_short Synaptic transistors with aluminum oxide dielectrics enabling full audio frequency range signal processing
title_sort synaptic transistors with aluminum oxide dielectrics enabling full audio frequency range signal processing
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7542445/
https://www.ncbi.nlm.nih.gov/pubmed/33028862
http://dx.doi.org/10.1038/s41598-020-73705-w
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