Bottom-Up Copper Filling of Large Scale Through Silicon Vias for MEMS Technology

An electrodeposition process for void-free bottom-up filling of sub-millimeter scale through silicon vias (TSVs) with Cu is detailed. The 600 μm deep and nominally 125 μm diameter metallized vias were filled with Cu in less than 7 hours under potentiostatic control. The electrolyte is comprised of 1...

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Detalles Bibliográficos
Autores principales: Menk, L.A., Josell, D., Moffat, T. P., Baca, E., Blain, M. G., Smith, A., Dominguez, J., McClain, J., Yeh, P. D., Hollowell, A. E.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: 2018
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7542679/
https://www.ncbi.nlm.nih.gov/pubmed/33041354
Descripción
Sumario:An electrodeposition process for void-free bottom-up filling of sub-millimeter scale through silicon vias (TSVs) with Cu is detailed. The 600 μm deep and nominally 125 μm diameter metallized vias were filled with Cu in less than 7 hours under potentiostatic control. The electrolyte is comprised of 1.25 mol/L CuSO(4) −0.25 mol/L CH(3)SO(3)H with polyether and halide additions that selectively suppress metal deposition on the free surface and side walls. A brief qualitative discussion of the procedures used to identify and optimize the bottom-up void-free feature filling is presented.

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