Bottom-Up Copper Filling of Large Scale Through Silicon Vias for MEMS Technology

An electrodeposition process for void-free bottom-up filling of sub-millimeter scale through silicon vias (TSVs) with Cu is detailed. The 600 μm deep and nominally 125 μm diameter metallized vias were filled with Cu in less than 7 hours under potentiostatic control. The electrolyte is comprised of 1...

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Autores principales: Menk, L.A., Josell, D., Moffat, T. P., Baca, E., Blain, M. G., Smith, A., Dominguez, J., McClain, J., Yeh, P. D., Hollowell, A. E.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: 2018
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7542679/
https://www.ncbi.nlm.nih.gov/pubmed/33041354
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author Menk, L.A.
Josell, D.
Moffat, T. P.
Baca, E.
Blain, M. G.
Smith, A.
Dominguez, J.
McClain, J.
Yeh, P. D.
Hollowell, A. E.
author_facet Menk, L.A.
Josell, D.
Moffat, T. P.
Baca, E.
Blain, M. G.
Smith, A.
Dominguez, J.
McClain, J.
Yeh, P. D.
Hollowell, A. E.
author_sort Menk, L.A.
collection PubMed
description An electrodeposition process for void-free bottom-up filling of sub-millimeter scale through silicon vias (TSVs) with Cu is detailed. The 600 μm deep and nominally 125 μm diameter metallized vias were filled with Cu in less than 7 hours under potentiostatic control. The electrolyte is comprised of 1.25 mol/L CuSO(4) −0.25 mol/L CH(3)SO(3)H with polyether and halide additions that selectively suppress metal deposition on the free surface and side walls. A brief qualitative discussion of the procedures used to identify and optimize the bottom-up void-free feature filling is presented.
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spelling pubmed-75426792020-10-08 Bottom-Up Copper Filling of Large Scale Through Silicon Vias for MEMS Technology Menk, L.A. Josell, D. Moffat, T. P. Baca, E. Blain, M. G. Smith, A. Dominguez, J. McClain, J. Yeh, P. D. Hollowell, A. E. J Electrochem Soc Article An electrodeposition process for void-free bottom-up filling of sub-millimeter scale through silicon vias (TSVs) with Cu is detailed. The 600 μm deep and nominally 125 μm diameter metallized vias were filled with Cu in less than 7 hours under potentiostatic control. The electrolyte is comprised of 1.25 mol/L CuSO(4) −0.25 mol/L CH(3)SO(3)H with polyether and halide additions that selectively suppress metal deposition on the free surface and side walls. A brief qualitative discussion of the procedures used to identify and optimize the bottom-up void-free feature filling is presented. 2018 /pmc/articles/PMC7542679/ /pubmed/33041354 Text en This is an open access article distributed under the terms of the Creative Commons Attribution 4.0 License (CC BY, http://creativecommons.org/licenses/by/4.0/), which permits unrestricted reuse of the work in any medium, provided the original work is properly cited. [DOI: 10.1149/2.0091901jes]
spellingShingle Article
Menk, L.A.
Josell, D.
Moffat, T. P.
Baca, E.
Blain, M. G.
Smith, A.
Dominguez, J.
McClain, J.
Yeh, P. D.
Hollowell, A. E.
Bottom-Up Copper Filling of Large Scale Through Silicon Vias for MEMS Technology
title Bottom-Up Copper Filling of Large Scale Through Silicon Vias for MEMS Technology
title_full Bottom-Up Copper Filling of Large Scale Through Silicon Vias for MEMS Technology
title_fullStr Bottom-Up Copper Filling of Large Scale Through Silicon Vias for MEMS Technology
title_full_unstemmed Bottom-Up Copper Filling of Large Scale Through Silicon Vias for MEMS Technology
title_short Bottom-Up Copper Filling of Large Scale Through Silicon Vias for MEMS Technology
title_sort bottom-up copper filling of large scale through silicon vias for mems technology
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7542679/
https://www.ncbi.nlm.nih.gov/pubmed/33041354
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