Correction to “Partial Pressure Assisted Growth of Single-Layer Graphene Grown by Low-Pressure Chemical Vapor Deposition: Implications for High-Performance Graphene FET Devices”

Detalles Bibliográficos
Autores principales: Sharma, Indu, Papanai, Girija Shankar, Paul, Sharon Jyotika, Gupta, Bipin Kumar
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2020
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7558029/
https://www.ncbi.nlm.nih.gov/pubmed/33073158
http://dx.doi.org/10.1021/acsomega.0c04479
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author Sharma, Indu
Papanai, Girija Shankar
Paul, Sharon Jyotika
Gupta, Bipin Kumar
author_facet Sharma, Indu
Papanai, Girija Shankar
Paul, Sharon Jyotika
Gupta, Bipin Kumar
author_sort Sharma, Indu
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spelling pubmed-75580292020-10-16 Correction to “Partial Pressure Assisted Growth of Single-Layer Graphene Grown by Low-Pressure Chemical Vapor Deposition: Implications for High-Performance Graphene FET Devices” Sharma, Indu Papanai, Girija Shankar Paul, Sharon Jyotika Gupta, Bipin Kumar ACS Omega American Chemical Society 2020-09-30 /pmc/articles/PMC7558029/ /pubmed/33073158 http://dx.doi.org/10.1021/acsomega.0c04479 Text en This is an open access article published under an ACS AuthorChoice License (http://pubs.acs.org/page/policy/authorchoice_termsofuse.html) , which permits copying and redistribution of the article or any adaptations for non-commercial purposes.
spellingShingle Sharma, Indu
Papanai, Girija Shankar
Paul, Sharon Jyotika
Gupta, Bipin Kumar
Correction to “Partial Pressure Assisted Growth of Single-Layer Graphene Grown by Low-Pressure Chemical Vapor Deposition: Implications for High-Performance Graphene FET Devices”
title Correction to “Partial Pressure Assisted Growth of Single-Layer Graphene Grown by Low-Pressure Chemical Vapor Deposition: Implications for High-Performance Graphene FET Devices”
title_full Correction to “Partial Pressure Assisted Growth of Single-Layer Graphene Grown by Low-Pressure Chemical Vapor Deposition: Implications for High-Performance Graphene FET Devices”
title_fullStr Correction to “Partial Pressure Assisted Growth of Single-Layer Graphene Grown by Low-Pressure Chemical Vapor Deposition: Implications for High-Performance Graphene FET Devices”
title_full_unstemmed Correction to “Partial Pressure Assisted Growth of Single-Layer Graphene Grown by Low-Pressure Chemical Vapor Deposition: Implications for High-Performance Graphene FET Devices”
title_short Correction to “Partial Pressure Assisted Growth of Single-Layer Graphene Grown by Low-Pressure Chemical Vapor Deposition: Implications for High-Performance Graphene FET Devices”
title_sort correction to “partial pressure assisted growth of single-layer graphene grown by low-pressure chemical vapor deposition: implications for high-performance graphene fet devices”
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7558029/
https://www.ncbi.nlm.nih.gov/pubmed/33073158
http://dx.doi.org/10.1021/acsomega.0c04479
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