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Scalable Synthesis of a Sub-10 nm Chalcopyrite (CuFeS(2)) Nanocrystal by the Microwave-Assisted Synthesis Technique and Its Application in a Heavy-Metal-Free Broad-Band Photodetector

[Image: see text] A heavy-metal-free chalcopyrite (CuFeS(2)) nanocrystal has been synthesized via microwave-assisted growth. Large-scale nanocrystals with an average particle size of 5 nm are fabricated by this technique within a very short period of time without any need for organic ligands. Scanni...

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Detalles Bibliográficos
Autores principales: Kumar, Brajesh, Singh, Satya Veer, Chattopadhyay, Abhimanyu, Biring, Sajal, Pal, Bhola N.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2020
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7558061/
https://www.ncbi.nlm.nih.gov/pubmed/33073121
http://dx.doi.org/10.1021/acsomega.0c03336
Descripción
Sumario:[Image: see text] A heavy-metal-free chalcopyrite (CuFeS(2)) nanocrystal has been synthesized via microwave-assisted growth. Large-scale nanocrystals with an average particle size of 5 nm are fabricated by this technique within a very short period of time without any need for organic ligands. Scanning electron microscopy study (SEM) of individual synthesis steps indicates that aggregates of nanocrystals are formed as flakes during microwave-assisted synthesis. The colloidal solution of the CuFeS(2) nanocrystal was prepared by sonicating these flakes. Transmission electron microscopy (TEM) study reveals the growth of sub-10 nm CuFeS(2) nanocrystals that are further characterized by X-ray diffraction. UV–visible absorption spectroscopic study shows that the band gap of this nanocrystal is ∼1.3 eV. To investigate the photosensitive nature of this nanocrystal, a bilayer p–n heterojunction photodetector has been fabricated using this nontoxic CuFeS(2) nanocrystal as a photoactive material and n-type ZnO as a charge-transport layer. The detectivity of this photodetector reaches above 10(12) Jones in visible and near-infrared (NIR) regions under 10 V external bias, which is significantly high for a nontoxic nanocrystal-based photodetector.