Cargando…
Stress and Microstructure Evolution in Mo Thin Films without or with Cover Layers during Thermal-Cycling
The intrinsic stress behavior and microstructure evolution of Molybdenum thin films were investigated to evaluate their applicability as a metallization in high temperature microelectronic devices. For this purpose, 100 nm thick Mo films were sputter-deposited without or with an AlN or SiO(2) cover...
Autores principales: | Park, Eunmi, Seifert, Marietta, Rane, Gayatri K., Menzel, Siegfried B., Gemming, Thomas, Nielsch, Kornelius |
---|---|
Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2020
|
Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7559374/ https://www.ncbi.nlm.nih.gov/pubmed/32899878 http://dx.doi.org/10.3390/ma13183926 |
Ejemplares similares
-
The Influence of the Composition of Ru(100−x)Al(x) (x = 50, 55, 60, 67) Thin Films on Their Thermal Stability
por: Seifert, Marietta, et al.
Publicado: (2017) -
Mo-La(2)O(3) Multilayer Metallization Systems for High Temperature Surface Acoustic Wave Sensor Devices
por: Menzel, Siegfried B., et al.
Publicado: (2019) -
Capability Study of Ti, Cr, W, Ta and Pt as Seed Layers for Electrodeposited Platinum Films on γ-Al(2)O(3) for High Temperature and Harsh Environment Applications
por: Seifert, Marietta, et al.
Publicado: (2017) -
Phase Formation and High-Temperature Stability of Very Thin Co-Sputtered Ti-Al and Multilayered Ti/Al Films on Thermally Oxidized Si Substrates
por: Seifert, Marietta, et al.
Publicado: (2020) -
Tungsten as a Chemically-Stable Electrode Material on Ga-Containing Piezoelectric Substrates Langasite and Catangasite for High-Temperature SAW Devices
por: Rane, Gayatri K., et al.
Publicado: (2016)