Cargando…

Plasmonic-Layered InAs/InGaAs Quantum-Dots-in-a-Well Pixel Detector for Spectral-Shaping and Photocurrent Enhancement

The algorithmic spectrometry as an alternative to traditional approaches has the potential to become the next generation of infrared (IR) spectral sensing technology, which is free of physical optical filters, and only a very small number of data are required from the IR detector. A key requirement...

Descripción completa

Detalles Bibliográficos
Autores principales:	Hwang, Jehwan, Ku, Zahyun, Jeon, Jiyeon, Kim, Yeongho, Kim, Jun Oh, Kim, Deok-Kee, Urbas, Augustine, Kim, Eun Kyu, Lee, Sang Jun
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	MDPI 2020
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7559483/ https://www.ncbi.nlm.nih.gov/pubmed/32933197 http://dx.doi.org/10.3390/nano10091827

Ejemplares similares

Polarization-Sensitive and Wide Incidence Angle-Insensitive Fabry–Perot Optical Cavity Bounded by Two Metal Grating Layers
por: Hwang, Jehwan, et al.
Publicado: (2020)

A Low-loss Metasurface Antireflection Coating on Dispersive Surface Plasmon Structure
por: Jeon, Jiyeon, et al.
Publicado: (2016)

Comparative Study of Photoelectric Properties of Metamorphic InAs/InGaAs and InAs/GaAs Quantum Dot Structures
por: Golovynskyi, Sergii, et al.
Publicado: (2017)

Ultrasmall microdisk and microring lasers based on InAs/InGaAs/GaAs quantum dots
por: Maximov, Mikhail V, et al.
Publicado: (2014)

Fabry-Perot cavity resonance enabling highly polarization-sensitive double-layer gold grating
por: Hwang, Jehwan, et al.
Publicado: (2018)

Experimental Demonstration of Adaptive Infrared Multispectral Imaging using Plasmonic Filter Array
por: Jang, Woo-Yong, et al.
Publicado: (2016)

Theoretical study of strain-dependent optical absorption in a doped self-assembled InAs/InGaAs/GaAs/AlGaAs quantum dot
por: Ameen, Tarek A, et al.
Publicado: (2018)

The Influence of a Continuum Background on Carrier Relaxation in InAs/InGaAs Quantum Dot
por: Rainò, Gabriele, et al.
Publicado: (2007)

Optical identification of electronic state levels of an asymmetric InAs/InGaAs/GaAs dot-in-well structure
por: Zhou, Xiaolong, et al.
Publicado: (2011)

Towards InAs/InGaAs/GaAs Quantum Dot Solar Cells Directly Grown on Si Substrate
por: Azeza, Bilel, et al.
Publicado: (2015)

Optical properties of as-grown and annealed InAs quantum dots on InGaAs cross-hatch patterns
por: Himwas, Chalermchai, et al.
Publicado: (2011)

Detailed Study of the Influence of InGaAs Matrix on the Strain Reduction in the InAs Dot-In-Well Structure
por: Wang, Peng, et al.
Publicado: (2016)

Temperature Evolution of Two-State Lasing in Microdisk Lasers with InAs/InGaAs Quantum Dots
por: Makhov, Ivan, et al.
Publicado: (2023)

Effects of annealing on performances of 1.3-μm InAs-InGaAs-GaAs quantum dot electroabsorption modulators
por: Lee, Shuh Ying, et al.
Publicado: (2013)

Electronic and Optical Properties of InAs QDs Grown by MBE on InGaAs Metamorphic Buffer
por: Wyborski, Paweł, et al.
Publicado: (2022)

Bipolar Effects in Photovoltage of Metamorphic InAs/InGaAs/GaAs Quantum Dot Heterostructures: Characterization and Design Solutions for Light-Sensitive Devices
por: Golovynskyi, Sergii, et al.
Publicado: (2017)

Interband Photoconductivity of Metamorphic InAs/InGaAs Quantum Dots in the 1.3–1.55-μm Window
por: Golovynskyi, Sergii, et al.
Publicado: (2018)

Single InGaAs Quantum Dot Coupling to the Plasmon Resonance of a Metal Nanocrystal
por: Urbańczyk, A, et al.
Publicado: (2010)

Observation of linear and quadratic magnetic field-dependence of magneto-photocurrents in InAs/GaSb superlattice
por: Li, Yuan, et al.
Publicado: (2014)

Detecting Spatially Localized Exciton in Self-Organized InAs/InGaAs Quantum Dot Superlattices: a Way to Improve the Photovoltaic Efficiency
por: Ezzedini, Maher, et al.
Publicado: (2017)

Spin transport in undoped InGaAs/AlGaAs multiple quantum well studied via spin photocurrent excited by circularly polarized light
por: Zhu, Laipan, et al.
Publicado: (2016)

Spin photocurrent spectra induced by Rashba- and Dresselhaus-type circular photogalvanic effect at inter-band excitation in InGaAs/GaAs/AlGaAs step quantum wells
por: Yu, Jinling, et al.
Publicado: (2014)

Experimentally-Verified Modeling of InGaAs Quantum Dots
por: Kosarev, Alexander N., et al.
Publicado: (2022)

Narrow ridge waveguide high power single mode 1.3-μm InAs/InGaAs ten-layer quantum dot lasers
por: Cao, Q, et al.
Publicado: (2007)

InAs/AlGaAs quantum dots for single-photon emission in a red spectral range
por: Rakhlin, M. V., et al.
Publicado: (2018)

Photoconductivity Relaxation Mechanisms of InGaAs/GaAs Quantum Dot Chain Structures
por: Kondratenko, Serhiy V., et al.
Publicado: (2017)

Plasmonic field confinement for separate absorption-multiplication in InGaAs nanopillar avalanche photodiodes
por: Farrell, Alan C., et al.
Publicado: (2015)

Energy state of InGaAs quantum dots on SiO(2)-patterned vicinal substrate
por: Kim, Hyo Jin, et al.
Publicado: (2012)

Chirped InGaAs quantum dot molecules for broadband applications
por: Patanasemakul, Nirat, et al.
Publicado: (2012)

Optimization of InGaAs/InAlAs Avalanche Photodiodes
por: Chen, Jun, et al.
Publicado: (2017)

Phonon Transport in GaAs and InAs Twinning Superlattices
por: López-Güell, Kim, et al.
Publicado: (2022)

Review of Ge(GeSn) and InGaAs Avalanche Diodes Operating in the SWIR Spectral Region
por: Miao, Yuanhao, et al.
Publicado: (2023)

Metamaterial Perfect Absorber Analyzed by a Meta-cavity Model Consisting of Multilayer Metasurfaces
por: Bhattarai, Khagendra, et al.
Publicado: (2017)

Correlating Photoluminescence and Structural Properties of Uncapped and GaAs-Capped Epitaxial InGaAs Quantum Dots
por: Dey, Arka B., et al.
Publicado: (2018)

Multilayers of InGaAs Nanostructures Grown on GaAs(210) Substrates
por: Wang, Zhiming M, et al.
Publicado: (2010)

Helicity-dependent photocurrent induced by the in-plane transverse electric current in an InAs quantum well
por: Li, J. B., et al.
Publicado: (2016)

Loss mitigation in plasmonic solar cells: aluminium nanoparticles for broadband photocurrent enhancements in GaAs photodiodes
por: Hylton, N. P., et al.
Publicado: (2013)

Anomalous Photocurrent Reversal Due to Hole Traps in AlGaN-Based Deep-Ultraviolet Light-Emitting Diodes
por: Lim, Seungyoung, et al.
Publicado: (2022)

Defect-Induced Photoluminescence Blinking of Single Epitaxial InGaAs Quantum Dots
por: Hu, Fengrui, et al.
Publicado: (2015)

Improvement of Terahertz Wave Radiation for InAs Nanowires by Simple Dipping into Tap Water
por: Park, Dong Woo, et al.
Publicado: (2016)

Cannot write session to /tmp/vufind_sessions/sess_juq1clvojom96kvmuktlitmj0t