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Improved Intrinsic Nonlinear Characteristics of Ta(2)O(5)/Al(2)O(3)-Based Resistive Random-Access Memory for High-Density Memory Applications
The major hindrance for high-density application of two-terminal resistive random-access memory (RRAM) array design is unintentional sneak path leakage through adjacent cells. Herein, we propose a bilayer structure of Ta(2)O(5)/Al(2)O(3)-based bipolar type RRAM by evaluating the intrinsic nonlinear...
| Autores principales: | , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
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MDPI
2020
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| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7560462/ https://www.ncbi.nlm.nih.gov/pubmed/32967344 http://dx.doi.org/10.3390/ma13184201 |