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Synthesis and characterization of WS(2)/graphene/SiC van der Waals heterostructures via WO(3−x) thin film sulfurization
Van der Waals heterostructures of monolayer transition metal dichalcogenides (TMDs) and graphene have attracted keen scientific interest due to the complementary properties of the materials, which have wide reaching technological applications. Direct growth of uniform, large area TMDs on graphene su...
Autores principales: | , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group UK
2020
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7567119/ https://www.ncbi.nlm.nih.gov/pubmed/33060655 http://dx.doi.org/10.1038/s41598-020-74024-w |
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author | Bradford, Jonathan Shafiei, Mahnaz MacLeod, Jennifer Motta, Nunzio |
author_facet | Bradford, Jonathan Shafiei, Mahnaz MacLeod, Jennifer Motta, Nunzio |
author_sort | Bradford, Jonathan |
collection | PubMed |
description | Van der Waals heterostructures of monolayer transition metal dichalcogenides (TMDs) and graphene have attracted keen scientific interest due to the complementary properties of the materials, which have wide reaching technological applications. Direct growth of uniform, large area TMDs on graphene substrates by chemical vapor deposition (CVD) is limited by slow lateral growth rates, which result in a tendency for non-uniform multilayer growth. In this work, monolayer and few-layer WS(2) was grown on epitaxial graphene on SiC by sulfurization of WO(3−x) thin films deposited directly onto the substrate. Using this method, WS(2) growth was achieved at temperatures as low as 700 °C – significantly less than the temperature required for conventional CVD. Achieving long-range uniformity remains a challenge, but this process could provide a route to synthesize a broad range of TMD/graphene van der Waals heterostructures with novel properties and functionality not accessible by conventional CVD growth. |
format | Online Article Text |
id | pubmed-7567119 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2020 |
publisher | Nature Publishing Group UK |
record_format | MEDLINE/PubMed |
spelling | pubmed-75671192020-10-19 Synthesis and characterization of WS(2)/graphene/SiC van der Waals heterostructures via WO(3−x) thin film sulfurization Bradford, Jonathan Shafiei, Mahnaz MacLeod, Jennifer Motta, Nunzio Sci Rep Article Van der Waals heterostructures of monolayer transition metal dichalcogenides (TMDs) and graphene have attracted keen scientific interest due to the complementary properties of the materials, which have wide reaching technological applications. Direct growth of uniform, large area TMDs on graphene substrates by chemical vapor deposition (CVD) is limited by slow lateral growth rates, which result in a tendency for non-uniform multilayer growth. In this work, monolayer and few-layer WS(2) was grown on epitaxial graphene on SiC by sulfurization of WO(3−x) thin films deposited directly onto the substrate. Using this method, WS(2) growth was achieved at temperatures as low as 700 °C – significantly less than the temperature required for conventional CVD. Achieving long-range uniformity remains a challenge, but this process could provide a route to synthesize a broad range of TMD/graphene van der Waals heterostructures with novel properties and functionality not accessible by conventional CVD growth. Nature Publishing Group UK 2020-10-15 /pmc/articles/PMC7567119/ /pubmed/33060655 http://dx.doi.org/10.1038/s41598-020-74024-w Text en © The Author(s) 2020 Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons licence, and indicate if changes were made. The images or other third party material in this article are included in the article's Creative Commons licence, unless indicated otherwise in a credit line to the material. If material is not included in the article's Creative Commons licence and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this licence, visit http://creativecommons.org/licenses/by/4.0/. |
spellingShingle | Article Bradford, Jonathan Shafiei, Mahnaz MacLeod, Jennifer Motta, Nunzio Synthesis and characterization of WS(2)/graphene/SiC van der Waals heterostructures via WO(3−x) thin film sulfurization |
title | Synthesis and characterization of WS(2)/graphene/SiC van der Waals heterostructures via WO(3−x) thin film sulfurization |
title_full | Synthesis and characterization of WS(2)/graphene/SiC van der Waals heterostructures via WO(3−x) thin film sulfurization |
title_fullStr | Synthesis and characterization of WS(2)/graphene/SiC van der Waals heterostructures via WO(3−x) thin film sulfurization |
title_full_unstemmed | Synthesis and characterization of WS(2)/graphene/SiC van der Waals heterostructures via WO(3−x) thin film sulfurization |
title_short | Synthesis and characterization of WS(2)/graphene/SiC van der Waals heterostructures via WO(3−x) thin film sulfurization |
title_sort | synthesis and characterization of ws(2)/graphene/sic van der waals heterostructures via wo(3−x) thin film sulfurization |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7567119/ https://www.ncbi.nlm.nih.gov/pubmed/33060655 http://dx.doi.org/10.1038/s41598-020-74024-w |
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