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Synthesis and characterization of WS(2)/graphene/SiC van der Waals heterostructures via WO(3−x) thin film sulfurization

Van der Waals heterostructures of monolayer transition metal dichalcogenides (TMDs) and graphene have attracted keen scientific interest due to the complementary properties of the materials, which have wide reaching technological applications. Direct growth of uniform, large area TMDs on graphene su...

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Autores principales: Bradford, Jonathan, Shafiei, Mahnaz, MacLeod, Jennifer, Motta, Nunzio
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2020
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7567119/
https://www.ncbi.nlm.nih.gov/pubmed/33060655
http://dx.doi.org/10.1038/s41598-020-74024-w
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author Bradford, Jonathan
Shafiei, Mahnaz
MacLeod, Jennifer
Motta, Nunzio
author_facet Bradford, Jonathan
Shafiei, Mahnaz
MacLeod, Jennifer
Motta, Nunzio
author_sort Bradford, Jonathan
collection PubMed
description Van der Waals heterostructures of monolayer transition metal dichalcogenides (TMDs) and graphene have attracted keen scientific interest due to the complementary properties of the materials, which have wide reaching technological applications. Direct growth of uniform, large area TMDs on graphene substrates by chemical vapor deposition (CVD) is limited by slow lateral growth rates, which result in a tendency for non-uniform multilayer growth. In this work, monolayer and few-layer WS(2) was grown on epitaxial graphene on SiC by sulfurization of WO(3−x) thin films deposited directly onto the substrate. Using this method, WS(2) growth was achieved at temperatures as low as 700 °C – significantly less than the temperature required for conventional CVD. Achieving long-range uniformity remains a challenge, but this process could provide a route to synthesize a broad range of TMD/graphene van der Waals heterostructures with novel properties and functionality not accessible by conventional CVD growth.
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spelling pubmed-75671192020-10-19 Synthesis and characterization of WS(2)/graphene/SiC van der Waals heterostructures via WO(3−x) thin film sulfurization Bradford, Jonathan Shafiei, Mahnaz MacLeod, Jennifer Motta, Nunzio Sci Rep Article Van der Waals heterostructures of monolayer transition metal dichalcogenides (TMDs) and graphene have attracted keen scientific interest due to the complementary properties of the materials, which have wide reaching technological applications. Direct growth of uniform, large area TMDs on graphene substrates by chemical vapor deposition (CVD) is limited by slow lateral growth rates, which result in a tendency for non-uniform multilayer growth. In this work, monolayer and few-layer WS(2) was grown on epitaxial graphene on SiC by sulfurization of WO(3−x) thin films deposited directly onto the substrate. Using this method, WS(2) growth was achieved at temperatures as low as 700 °C – significantly less than the temperature required for conventional CVD. Achieving long-range uniformity remains a challenge, but this process could provide a route to synthesize a broad range of TMD/graphene van der Waals heterostructures with novel properties and functionality not accessible by conventional CVD growth. Nature Publishing Group UK 2020-10-15 /pmc/articles/PMC7567119/ /pubmed/33060655 http://dx.doi.org/10.1038/s41598-020-74024-w Text en © The Author(s) 2020 Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons licence, and indicate if changes were made. The images or other third party material in this article are included in the article's Creative Commons licence, unless indicated otherwise in a credit line to the material. If material is not included in the article's Creative Commons licence and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this licence, visit http://creativecommons.org/licenses/by/4.0/.
spellingShingle Article
Bradford, Jonathan
Shafiei, Mahnaz
MacLeod, Jennifer
Motta, Nunzio
Synthesis and characterization of WS(2)/graphene/SiC van der Waals heterostructures via WO(3−x) thin film sulfurization
title Synthesis and characterization of WS(2)/graphene/SiC van der Waals heterostructures via WO(3−x) thin film sulfurization
title_full Synthesis and characterization of WS(2)/graphene/SiC van der Waals heterostructures via WO(3−x) thin film sulfurization
title_fullStr Synthesis and characterization of WS(2)/graphene/SiC van der Waals heterostructures via WO(3−x) thin film sulfurization
title_full_unstemmed Synthesis and characterization of WS(2)/graphene/SiC van der Waals heterostructures via WO(3−x) thin film sulfurization
title_short Synthesis and characterization of WS(2)/graphene/SiC van der Waals heterostructures via WO(3−x) thin film sulfurization
title_sort synthesis and characterization of ws(2)/graphene/sic van der waals heterostructures via wo(3−x) thin film sulfurization
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7567119/
https://www.ncbi.nlm.nih.gov/pubmed/33060655
http://dx.doi.org/10.1038/s41598-020-74024-w
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