Investigation of AlGaN/GaN HFET and VO(2) Thin Film Based Deflection Transducers Embedded in GaN Microcantilevers

The static and dynamic deflection transducing performances of piezotransistive AlGaN/GaN heterojunction field effect transistors (HFET) and piezoresistive VO(2) thin films, fabricated on GaN microcantilevers of similar dimensions, were investigated. Deflection sensitivities were tuned with the gate...

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Detalles Bibliográficos
Autores principales: Bayram, Ferhat, Gajula, Durga, Khan, Digangana, Koley, Goutam
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2020
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7570367/
https://www.ncbi.nlm.nih.gov/pubmed/32962251
http://dx.doi.org/10.3390/mi11090875

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7570367/
https://www.ncbi.nlm.nih.gov/pubmed/32962251
http://dx.doi.org/10.3390/mi11090875

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