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Semi insulating N-gallium nitride (GaN) on sapphire surface reflection dataset obtained at millimeter wave frequencies 107.35–165 GHz

A systematic collection of voltage reflection data for semi-insulating N-GaN wafer surface along with the reference reflection voltages are accomplished using a very stable continuous wave (CW) frequency stable probe source. The 2″ diameter direct-bandgap 5 µm silicon doped 10(5) Ω-cm GaN on 434 µm...

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Detalles Bibliográficos
Autores principales: Roy, Biswadev, Wu, Marvin H., Vlahovic, Branislav
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Elsevier 2020
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7581872/
https://www.ncbi.nlm.nih.gov/pubmed/33117865
http://dx.doi.org/10.1016/j.dib.2020.106419