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Semi insulating N-gallium nitride (GaN) on sapphire surface reflection dataset obtained at millimeter wave frequencies 107.35–165 GHz
A systematic collection of voltage reflection data for semi-insulating N-GaN wafer surface along with the reference reflection voltages are accomplished using a very stable continuous wave (CW) frequency stable probe source. The 2″ diameter direct-bandgap 5 µm silicon doped 10(5) Ω-cm GaN on 434 µm...
| Autores principales: | , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Elsevier
2020
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7581872/ https://www.ncbi.nlm.nih.gov/pubmed/33117865 http://dx.doi.org/10.1016/j.dib.2020.106419 |