GaPO(4) Single Crystals: Growth Condition by Hydrothermal Refluxing Method

Bulk GaPO(4) is an advanced piezoelectric material operating under high temperatures according to the α-β phase transition at 970 °C. This work presents the technological development of a hydrothermal refluxing method first applied for GaPO(4) single crystal growth. Crystals of 10–20 g were grown in...

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Detalles Bibliográficos
Autores principales: Balitsky, Denis, Philippot, Etienne, Balitsky, Vladimir, Balitskaya, Ludmila, Setkova, Tatiana, Bublikova, Tatiana, Papet, Philippe
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2020
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7582322/
https://www.ncbi.nlm.nih.gov/pubmed/33023119
http://dx.doi.org/10.3390/molecules25194518

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7582322/
https://www.ncbi.nlm.nih.gov/pubmed/33023119
http://dx.doi.org/10.3390/molecules25194518

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