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A CMOS-MEMS BEOL 2-axis Lorentz-Force Magnetometer with Device-Level Offset Cancellation
Lorentz-force Microelectromechanical Systems (MEMS) magnetometers have been proposed as a replacement for magnetometers currently used in consumer electronics market. Being MEMS devices, they can be manufactured in the same die as accelerometers and gyroscopes, greatly reducing current solutions vol...
Autores principales: | , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2020
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7589634/ https://www.ncbi.nlm.nih.gov/pubmed/33086559 http://dx.doi.org/10.3390/s20205899 |
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author | Sánchez-Chiva, Josep Maria Valle, Juan Fernández, Daniel Madrenas, Jordi |
author_facet | Sánchez-Chiva, Josep Maria Valle, Juan Fernández, Daniel Madrenas, Jordi |
author_sort | Sánchez-Chiva, Josep Maria |
collection | PubMed |
description | Lorentz-force Microelectromechanical Systems (MEMS) magnetometers have been proposed as a replacement for magnetometers currently used in consumer electronics market. Being MEMS devices, they can be manufactured in the same die as accelerometers and gyroscopes, greatly reducing current solutions volume and costs. However, they still present low sensitivities and large offsets that hinder their performance. In this article, a 2-axis out-of-plane, lateral field sensing, CMOS-MEMS magnetometer designed using the Back-End-Of-Line (BEOL) metal and oxide layers of a standard CMOS (Complementary Metal–Oxide–Semiconductor) process is proposed. As a result, its integration in the same die area, side-by-side, not only with other MEMS devices, but with the readout electronics is possible. A shielding structure is proposed that cancels out the offset frequently reported in this kind of sensors. Full-wafer device characterization has been performed, which provides valuable information on device yield and performance. The proposed device has a minimum yield of [Formula: see text] with a good uniformity of the resonance frequency [Formula: see text] kHz, [Formula: see text] kHz and quality factor [Formula: see text] , [Formula: see text] at ambient pressure. Device sensitivity to magnetic field is [Formula: see text] fA [Formula: see text] T [Formula: see text] at [Formula: see text] Pa when driven with [Formula: see text]. |
format | Online Article Text |
id | pubmed-7589634 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2020 |
publisher | MDPI |
record_format | MEDLINE/PubMed |
spelling | pubmed-75896342020-10-29 A CMOS-MEMS BEOL 2-axis Lorentz-Force Magnetometer with Device-Level Offset Cancellation Sánchez-Chiva, Josep Maria Valle, Juan Fernández, Daniel Madrenas, Jordi Sensors (Basel) Article Lorentz-force Microelectromechanical Systems (MEMS) magnetometers have been proposed as a replacement for magnetometers currently used in consumer electronics market. Being MEMS devices, they can be manufactured in the same die as accelerometers and gyroscopes, greatly reducing current solutions volume and costs. However, they still present low sensitivities and large offsets that hinder their performance. In this article, a 2-axis out-of-plane, lateral field sensing, CMOS-MEMS magnetometer designed using the Back-End-Of-Line (BEOL) metal and oxide layers of a standard CMOS (Complementary Metal–Oxide–Semiconductor) process is proposed. As a result, its integration in the same die area, side-by-side, not only with other MEMS devices, but with the readout electronics is possible. A shielding structure is proposed that cancels out the offset frequently reported in this kind of sensors. Full-wafer device characterization has been performed, which provides valuable information on device yield and performance. The proposed device has a minimum yield of [Formula: see text] with a good uniformity of the resonance frequency [Formula: see text] kHz, [Formula: see text] kHz and quality factor [Formula: see text] , [Formula: see text] at ambient pressure. Device sensitivity to magnetic field is [Formula: see text] fA [Formula: see text] T [Formula: see text] at [Formula: see text] Pa when driven with [Formula: see text]. MDPI 2020-10-19 /pmc/articles/PMC7589634/ /pubmed/33086559 http://dx.doi.org/10.3390/s20205899 Text en © 2020 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/). |
spellingShingle | Article Sánchez-Chiva, Josep Maria Valle, Juan Fernández, Daniel Madrenas, Jordi A CMOS-MEMS BEOL 2-axis Lorentz-Force Magnetometer with Device-Level Offset Cancellation |
title | A CMOS-MEMS BEOL 2-axis Lorentz-Force Magnetometer with Device-Level Offset Cancellation |
title_full | A CMOS-MEMS BEOL 2-axis Lorentz-Force Magnetometer with Device-Level Offset Cancellation |
title_fullStr | A CMOS-MEMS BEOL 2-axis Lorentz-Force Magnetometer with Device-Level Offset Cancellation |
title_full_unstemmed | A CMOS-MEMS BEOL 2-axis Lorentz-Force Magnetometer with Device-Level Offset Cancellation |
title_short | A CMOS-MEMS BEOL 2-axis Lorentz-Force Magnetometer with Device-Level Offset Cancellation |
title_sort | cmos-mems beol 2-axis lorentz-force magnetometer with device-level offset cancellation |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7589634/ https://www.ncbi.nlm.nih.gov/pubmed/33086559 http://dx.doi.org/10.3390/s20205899 |
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