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A CMOS-MEMS BEOL 2-axis Lorentz-Force Magnetometer with Device-Level Offset Cancellation

Lorentz-force Microelectromechanical Systems (MEMS) magnetometers have been proposed as a replacement for magnetometers currently used in consumer electronics market. Being MEMS devices, they can be manufactured in the same die as accelerometers and gyroscopes, greatly reducing current solutions vol...

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Autores principales: Sánchez-Chiva, Josep Maria, Valle, Juan, Fernández, Daniel, Madrenas, Jordi
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2020
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7589634/
https://www.ncbi.nlm.nih.gov/pubmed/33086559
http://dx.doi.org/10.3390/s20205899
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author Sánchez-Chiva, Josep Maria
Valle, Juan
Fernández, Daniel
Madrenas, Jordi
author_facet Sánchez-Chiva, Josep Maria
Valle, Juan
Fernández, Daniel
Madrenas, Jordi
author_sort Sánchez-Chiva, Josep Maria
collection PubMed
description Lorentz-force Microelectromechanical Systems (MEMS) magnetometers have been proposed as a replacement for magnetometers currently used in consumer electronics market. Being MEMS devices, they can be manufactured in the same die as accelerometers and gyroscopes, greatly reducing current solutions volume and costs. However, they still present low sensitivities and large offsets that hinder their performance. In this article, a 2-axis out-of-plane, lateral field sensing, CMOS-MEMS magnetometer designed using the Back-End-Of-Line (BEOL) metal and oxide layers of a standard CMOS (Complementary Metal–Oxide–Semiconductor) process is proposed. As a result, its integration in the same die area, side-by-side, not only with other MEMS devices, but with the readout electronics is possible. A shielding structure is proposed that cancels out the offset frequently reported in this kind of sensors. Full-wafer device characterization has been performed, which provides valuable information on device yield and performance. The proposed device has a minimum yield of [Formula: see text] with a good uniformity of the resonance frequency [Formula: see text] kHz, [Formula: see text] kHz and quality factor [Formula: see text] , [Formula: see text] at ambient pressure. Device sensitivity to magnetic field is [Formula: see text] fA [Formula: see text] T [Formula: see text] at [Formula: see text] Pa when driven with [Formula: see text].
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spelling pubmed-75896342020-10-29 A CMOS-MEMS BEOL 2-axis Lorentz-Force Magnetometer with Device-Level Offset Cancellation Sánchez-Chiva, Josep Maria Valle, Juan Fernández, Daniel Madrenas, Jordi Sensors (Basel) Article Lorentz-force Microelectromechanical Systems (MEMS) magnetometers have been proposed as a replacement for magnetometers currently used in consumer electronics market. Being MEMS devices, they can be manufactured in the same die as accelerometers and gyroscopes, greatly reducing current solutions volume and costs. However, they still present low sensitivities and large offsets that hinder their performance. In this article, a 2-axis out-of-plane, lateral field sensing, CMOS-MEMS magnetometer designed using the Back-End-Of-Line (BEOL) metal and oxide layers of a standard CMOS (Complementary Metal–Oxide–Semiconductor) process is proposed. As a result, its integration in the same die area, side-by-side, not only with other MEMS devices, but with the readout electronics is possible. A shielding structure is proposed that cancels out the offset frequently reported in this kind of sensors. Full-wafer device characterization has been performed, which provides valuable information on device yield and performance. The proposed device has a minimum yield of [Formula: see text] with a good uniformity of the resonance frequency [Formula: see text] kHz, [Formula: see text] kHz and quality factor [Formula: see text] , [Formula: see text] at ambient pressure. Device sensitivity to magnetic field is [Formula: see text] fA [Formula: see text] T [Formula: see text] at [Formula: see text] Pa when driven with [Formula: see text]. MDPI 2020-10-19 /pmc/articles/PMC7589634/ /pubmed/33086559 http://dx.doi.org/10.3390/s20205899 Text en © 2020 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).
spellingShingle Article
Sánchez-Chiva, Josep Maria
Valle, Juan
Fernández, Daniel
Madrenas, Jordi
A CMOS-MEMS BEOL 2-axis Lorentz-Force Magnetometer with Device-Level Offset Cancellation
title A CMOS-MEMS BEOL 2-axis Lorentz-Force Magnetometer with Device-Level Offset Cancellation
title_full A CMOS-MEMS BEOL 2-axis Lorentz-Force Magnetometer with Device-Level Offset Cancellation
title_fullStr A CMOS-MEMS BEOL 2-axis Lorentz-Force Magnetometer with Device-Level Offset Cancellation
title_full_unstemmed A CMOS-MEMS BEOL 2-axis Lorentz-Force Magnetometer with Device-Level Offset Cancellation
title_short A CMOS-MEMS BEOL 2-axis Lorentz-Force Magnetometer with Device-Level Offset Cancellation
title_sort cmos-mems beol 2-axis lorentz-force magnetometer with device-level offset cancellation
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7589634/
https://www.ncbi.nlm.nih.gov/pubmed/33086559
http://dx.doi.org/10.3390/s20205899
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