Comparative Study of Growth Morphologies of Ga(2)O(3) Nanowires on Different Substrates

Gallium oxide (Ga(2)O(3)) is a new wide bandgap semiconductor with remarkable properties that offers strong potential for applications in power electronics, optoelectronics, and devices for extreme conditions. In this work, we explore the morphology of Ga(2)O(3) nanostructures on different substrates and temperatures. We used silver catalysts to enhance the growth of Ga(2)O(3) nanowires on substrates such as p-Si substrate doped with boron, 250 nm SiO(2) on n-Si, 250 nm Si(3)N(4) on p-Si, quartz, and n-Si substrates by using a thermal oxidation technique at high temperatures (~1000 °C) in the presence of liquid silver paste that served as a catalyst layer. We present the results of the morphological, structural, and elemental characterization of the Ga(2)O(3) nanostructures. This work offers in-depth explanation of the dense, thin, and long Ga(2)O(3) nanowire growth directly on the surfaces of various types of substrates using silver catalysts.