Ferroelectric Switching in Trilayer Al(2)O(3)/HfZrO(x)/Al(2)O(3) Structure

Since ferroelectricity has been observed in simple binary oxide material systems, it has attracted great interest in semiconductor research fields such as advanced logic transistors, non-volatile memories, and neuromorphic devices. The location in which the ferroelectric devices are implemented depe...

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Detalles Bibliográficos
Autores principales: Im, Solyee, Kang, Seung-Youl, Kim, Yeriaron, Kim, Jeong Hun, Im, Jong-Pil, Yoon, Sung-Min, Moon, Seung Eon, Woo, Jiyong
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2020
Materias:
Communication
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7600860/
https://www.ncbi.nlm.nih.gov/pubmed/33007964
http://dx.doi.org/10.3390/mi11100910

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7600860/
https://www.ncbi.nlm.nih.gov/pubmed/33007964
http://dx.doi.org/10.3390/mi11100910

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