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Water-Gated Transistor Using Ion Exchange Resin for Potentiometric Fluoride Sensing

We introduce fluoride-selective anion exchange resin sorbents as sensitisers into membranes for water-gated field effect transistors (WGTFTs). Sorbents were prepared via metal (La or Al)-loading of a commercial macroporous aminophosphonic acid resin, Puromet(TM) MTS9501, and were filled into a plast...

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Detalles Bibliográficos
Autores principales: Alqahtani, Zahrah, Alghamdi, Nawal, Robshaw, Thomas J., Dawson, Robert, Ogden, Mark D., Buckely, Alastair, Grell, Martin
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2020
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7601498/
https://www.ncbi.nlm.nih.gov/pubmed/33027961
http://dx.doi.org/10.3390/mi11100923
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author Alqahtani, Zahrah
Alghamdi, Nawal
Robshaw, Thomas J.
Dawson, Robert
Ogden, Mark D.
Buckely, Alastair
Grell, Martin
author_facet Alqahtani, Zahrah
Alghamdi, Nawal
Robshaw, Thomas J.
Dawson, Robert
Ogden, Mark D.
Buckely, Alastair
Grell, Martin
author_sort Alqahtani, Zahrah
collection PubMed
description We introduce fluoride-selective anion exchange resin sorbents as sensitisers into membranes for water-gated field effect transistors (WGTFTs). Sorbents were prepared via metal (La or Al)-loading of a commercial macroporous aminophosphonic acid resin, Puromet(TM) MTS9501, and were filled into a plasticised poly(vinyl chloride) (PVC) phase transfer membrane. We found a potentiometric response (membrane potential leading to WGTFT threshold shift) to fluoride following a Langmuir–Freundlich (LF) adsorption isotherm with saturated membrane potential up to ~480 mV, extremely low characteristic concentration c(1/2) = 1/K, and picomolar limit of detection (LoD), even though ion exchange did not build up charge on the resin. La-loading gave a superior response compared to Al-loading. Membrane potential characteristics were distinctly different from charge accumulating sensitisers (e.g., organic macrocycles) but similar to the Cs(+) (cation) selective ion-exchanging zeolite mineral ‘mordenite’. We propose a mechanism for the observed threshold shift and investigate interference from co-solutes. Strong interference from carbonate was brought under control by ‘diluting’ metal loading in the resin. This work sets a template for future studies using an entirely new ‘family’ of sensitisers in applications where very low limit of detection is essential such as for ions of arsenic, mercury, copper, palladium, and gold.
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spelling pubmed-76014982020-11-01 Water-Gated Transistor Using Ion Exchange Resin for Potentiometric Fluoride Sensing Alqahtani, Zahrah Alghamdi, Nawal Robshaw, Thomas J. Dawson, Robert Ogden, Mark D. Buckely, Alastair Grell, Martin Micromachines (Basel) Article We introduce fluoride-selective anion exchange resin sorbents as sensitisers into membranes for water-gated field effect transistors (WGTFTs). Sorbents were prepared via metal (La or Al)-loading of a commercial macroporous aminophosphonic acid resin, Puromet(TM) MTS9501, and were filled into a plasticised poly(vinyl chloride) (PVC) phase transfer membrane. We found a potentiometric response (membrane potential leading to WGTFT threshold shift) to fluoride following a Langmuir–Freundlich (LF) adsorption isotherm with saturated membrane potential up to ~480 mV, extremely low characteristic concentration c(1/2) = 1/K, and picomolar limit of detection (LoD), even though ion exchange did not build up charge on the resin. La-loading gave a superior response compared to Al-loading. Membrane potential characteristics were distinctly different from charge accumulating sensitisers (e.g., organic macrocycles) but similar to the Cs(+) (cation) selective ion-exchanging zeolite mineral ‘mordenite’. We propose a mechanism for the observed threshold shift and investigate interference from co-solutes. Strong interference from carbonate was brought under control by ‘diluting’ metal loading in the resin. This work sets a template for future studies using an entirely new ‘family’ of sensitisers in applications where very low limit of detection is essential such as for ions of arsenic, mercury, copper, palladium, and gold. MDPI 2020-10-05 /pmc/articles/PMC7601498/ /pubmed/33027961 http://dx.doi.org/10.3390/mi11100923 Text en © 2020 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).
spellingShingle Article
Alqahtani, Zahrah
Alghamdi, Nawal
Robshaw, Thomas J.
Dawson, Robert
Ogden, Mark D.
Buckely, Alastair
Grell, Martin
Water-Gated Transistor Using Ion Exchange Resin for Potentiometric Fluoride Sensing
title Water-Gated Transistor Using Ion Exchange Resin for Potentiometric Fluoride Sensing
title_full Water-Gated Transistor Using Ion Exchange Resin for Potentiometric Fluoride Sensing
title_fullStr Water-Gated Transistor Using Ion Exchange Resin for Potentiometric Fluoride Sensing
title_full_unstemmed Water-Gated Transistor Using Ion Exchange Resin for Potentiometric Fluoride Sensing
title_short Water-Gated Transistor Using Ion Exchange Resin for Potentiometric Fluoride Sensing
title_sort water-gated transistor using ion exchange resin for potentiometric fluoride sensing
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7601498/
https://www.ncbi.nlm.nih.gov/pubmed/33027961
http://dx.doi.org/10.3390/mi11100923
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