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Development and Application of Resistance Strain Force Sensors

Resistance strain force sensors have been applied to monitor the strains in various parts and structures for industrial use. Here, we review the working principles, structural forms, and fabrication processes for resistance strain gauges. In particular, we focus on recent developments in resistance...

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Detalles Bibliográficos
Autores principales: Zhao, Yinming, Liu, Yang, Li, Yongqian, Hao, Qun
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2020
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7602478/
https://www.ncbi.nlm.nih.gov/pubmed/33076279
http://dx.doi.org/10.3390/s20205826
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author Zhao, Yinming
Liu, Yang
Li, Yongqian
Hao, Qun
author_facet Zhao, Yinming
Liu, Yang
Li, Yongqian
Hao, Qun
author_sort Zhao, Yinming
collection PubMed
description Resistance strain force sensors have been applied to monitor the strains in various parts and structures for industrial use. Here, we review the working principles, structural forms, and fabrication processes for resistance strain gauges. In particular, we focus on recent developments in resistance stress transfer for resistance strain force sensors and the creep effect due to sustained loads and/or temperature variations. Various error compensation methods to reduce the creep effect are analyzed to develop a metrology standard for resistance strain force sensors. Additionally, the current status of carbon nanotubes (CNTs), silicon carbide (SiC), gallium nitride (GaN), and other wide band gap semiconductors for a wide range of strain sensors are reviewed. The technical requirements and key issues of resistance strain force sensors for future applications are presented.
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spelling pubmed-76024782020-11-01 Development and Application of Resistance Strain Force Sensors Zhao, Yinming Liu, Yang Li, Yongqian Hao, Qun Sensors (Basel) Review Resistance strain force sensors have been applied to monitor the strains in various parts and structures for industrial use. Here, we review the working principles, structural forms, and fabrication processes for resistance strain gauges. In particular, we focus on recent developments in resistance stress transfer for resistance strain force sensors and the creep effect due to sustained loads and/or temperature variations. Various error compensation methods to reduce the creep effect are analyzed to develop a metrology standard for resistance strain force sensors. Additionally, the current status of carbon nanotubes (CNTs), silicon carbide (SiC), gallium nitride (GaN), and other wide band gap semiconductors for a wide range of strain sensors are reviewed. The technical requirements and key issues of resistance strain force sensors for future applications are presented. MDPI 2020-10-15 /pmc/articles/PMC7602478/ /pubmed/33076279 http://dx.doi.org/10.3390/s20205826 Text en © 2020 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).
spellingShingle Review
Zhao, Yinming
Liu, Yang
Li, Yongqian
Hao, Qun
Development and Application of Resistance Strain Force Sensors
title Development and Application of Resistance Strain Force Sensors
title_full Development and Application of Resistance Strain Force Sensors
title_fullStr Development and Application of Resistance Strain Force Sensors
title_full_unstemmed Development and Application of Resistance Strain Force Sensors
title_short Development and Application of Resistance Strain Force Sensors
title_sort development and application of resistance strain force sensors
topic Review
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7602478/
https://www.ncbi.nlm.nih.gov/pubmed/33076279
http://dx.doi.org/10.3390/s20205826
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