Boosting carrier mobility and stability in indium–zinc–tin oxide thin-film transistors through controlled crystallization

We investigated the effect of film thickness (geometrical confinement) on the structural evolution of sputtered indium-zinc-tin oxide (IZTO) films as high mobility n-channel semiconducting layers during post-treatment at different annealing temperatures ranging from 350 to 700 °C. Different thicknes...

Descripción completa

Detalles Bibliográficos
Autores principales: On, Nuri, Kim, Bo Kyoung, Kim, Yerin, Kim, Eun Hyun, Lim, Jun Hyung, Hosono, Hideo, Kim, Junghwan, Yang, Hoichang, Jeong, Jae Kyeong
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2020
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7606507/
https://www.ncbi.nlm.nih.gov/pubmed/33139811
http://dx.doi.org/10.1038/s41598-020-76046-w

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7606507/
https://www.ncbi.nlm.nih.gov/pubmed/33139811
http://dx.doi.org/10.1038/s41598-020-76046-w

Ejemplares similares