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Fabrication of Hierarchical Indium Vanadate Materials for Supercapacitor Application

Transition metal orthovanadates are emerging 2D materials for promising electrochemical energy storage applications. Facile hydrothermal method for nanocrystalline indium vanadate (InVO(4)) semiconducting materials’ fabrication is economical because of its direct chemical synthesis. X‐ray diffractio...

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Autores principales: Subramanian, Balachandran, Veerappan, Manimuthu, Rajan, Karthikeyan, Chen, Zheming, Hu, Chengzhi, Wang, Fei, Wang, Feng, Yang, Mingshu
Formato: Online Artículo Texto
Lenguaje:English
Publicado: John Wiley and Sons Inc. 2020
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7607248/
https://www.ncbi.nlm.nih.gov/pubmed/33163224
http://dx.doi.org/10.1002/gch2.202000002
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author Subramanian, Balachandran
Veerappan, Manimuthu
Rajan, Karthikeyan
Chen, Zheming
Hu, Chengzhi
Wang, Fei
Wang, Feng
Yang, Mingshu
author_facet Subramanian, Balachandran
Veerappan, Manimuthu
Rajan, Karthikeyan
Chen, Zheming
Hu, Chengzhi
Wang, Fei
Wang, Feng
Yang, Mingshu
author_sort Subramanian, Balachandran
collection PubMed
description Transition metal orthovanadates are emerging 2D materials for promising electrochemical energy storage applications. Facile hydrothermal method for nanocrystalline indium vanadate (InVO(4)) semiconducting materials’ fabrication is economical because of its direct chemical synthesis. X‐ray diffraction studies, field emission scanning electron microscope (SEM) images, transmission electron microscopy (TEM), and photoelectron X‐ray spectrum are used to describe the semiconductor materials as synthesized. InVO(4) microspheres have attracted a lot of attention in the energy and environmental sector. These microsphere‐derived semiconductor materials are recognized to offer the advantages of their large surface area, tunable pore sizes, enhanced light absorption, efficient carrier (electron–hole) separation, superior electronic and optical behavior, and high durability. From the results of SEM and TEM, InVO(4) shows a microsphere construction with a mixture of nanosized particles. Diffuse reflectance UV–visible measurements are used to determine the bandgap, and it is found to be 2.1 eV for InVO(4). The electrochemical analysis reveals a superior performance of the pseudocapacitor with hydrothermally derived microspheres of InVO(4). Alongside an improved pseudocapacity, developed after 4000 cycles, it has excellent cycling stability with a retention of ≈94% of its original specific capacitance efficiency.
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spelling pubmed-76072482020-11-06 Fabrication of Hierarchical Indium Vanadate Materials for Supercapacitor Application Subramanian, Balachandran Veerappan, Manimuthu Rajan, Karthikeyan Chen, Zheming Hu, Chengzhi Wang, Fei Wang, Feng Yang, Mingshu Glob Chall Full Papers Transition metal orthovanadates are emerging 2D materials for promising electrochemical energy storage applications. Facile hydrothermal method for nanocrystalline indium vanadate (InVO(4)) semiconducting materials’ fabrication is economical because of its direct chemical synthesis. X‐ray diffraction studies, field emission scanning electron microscope (SEM) images, transmission electron microscopy (TEM), and photoelectron X‐ray spectrum are used to describe the semiconductor materials as synthesized. InVO(4) microspheres have attracted a lot of attention in the energy and environmental sector. These microsphere‐derived semiconductor materials are recognized to offer the advantages of their large surface area, tunable pore sizes, enhanced light absorption, efficient carrier (electron–hole) separation, superior electronic and optical behavior, and high durability. From the results of SEM and TEM, InVO(4) shows a microsphere construction with a mixture of nanosized particles. Diffuse reflectance UV–visible measurements are used to determine the bandgap, and it is found to be 2.1 eV for InVO(4). The electrochemical analysis reveals a superior performance of the pseudocapacitor with hydrothermally derived microspheres of InVO(4). Alongside an improved pseudocapacity, developed after 4000 cycles, it has excellent cycling stability with a retention of ≈94% of its original specific capacitance efficiency. John Wiley and Sons Inc. 2020-09-28 /pmc/articles/PMC7607248/ /pubmed/33163224 http://dx.doi.org/10.1002/gch2.202000002 Text en © 2020 The Authors. Published by Wiley‐VCH GmbH This is an open access article under the terms of the http://creativecommons.org/licenses/by/4.0/ License, which permits use, distribution and reproduction in any medium, provided the original work is properly cited.
spellingShingle Full Papers
Subramanian, Balachandran
Veerappan, Manimuthu
Rajan, Karthikeyan
Chen, Zheming
Hu, Chengzhi
Wang, Fei
Wang, Feng
Yang, Mingshu
Fabrication of Hierarchical Indium Vanadate Materials for Supercapacitor Application
title Fabrication of Hierarchical Indium Vanadate Materials for Supercapacitor Application
title_full Fabrication of Hierarchical Indium Vanadate Materials for Supercapacitor Application
title_fullStr Fabrication of Hierarchical Indium Vanadate Materials for Supercapacitor Application
title_full_unstemmed Fabrication of Hierarchical Indium Vanadate Materials for Supercapacitor Application
title_short Fabrication of Hierarchical Indium Vanadate Materials for Supercapacitor Application
title_sort fabrication of hierarchical indium vanadate materials for supercapacitor application
topic Full Papers
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7607248/
https://www.ncbi.nlm.nih.gov/pubmed/33163224
http://dx.doi.org/10.1002/gch2.202000002
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