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Hexagonal BN‐Assisted Epitaxy of Strain Released GaN Films for True Green Light‐Emitting Diodes

Epitaxial growth of III‐nitrides on 2D materials enables the realization of flexible optoelectronic devices for next‐generation wearable applications. Unfortunately, it is difficult to obtain high‐quality III‐nitride epilayers on 2D materials such as hexagonal BN (h‐BN) due to different atom hybridi...

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Detalles Bibliográficos
Autores principales: Liu, Fang, Yu, Ye, Zhang, Yuantao, Rong, Xin, Wang, Tao, Zheng, Xiantong, Sheng, Bowen, Yang, Liuyun, Wei, Jiaqi, Wang, Xuepeng, Li, Xianbin, Yang, Xuelin, Xu, Fujun, Qin, Zhixin, Zhang, Zhaohui, Shen, Bo, Wang, Xinqiang
Formato: Online Artículo Texto
Lenguaje:English
Publicado: John Wiley and Sons Inc. 2020
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7610270/
https://www.ncbi.nlm.nih.gov/pubmed/33173724
http://dx.doi.org/10.1002/advs.202000917
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author Liu, Fang
Yu, Ye
Zhang, Yuantao
Rong, Xin
Wang, Tao
Zheng, Xiantong
Sheng, Bowen
Yang, Liuyun
Wei, Jiaqi
Wang, Xuepeng
Li, Xianbin
Yang, Xuelin
Xu, Fujun
Qin, Zhixin
Zhang, Zhaohui
Shen, Bo
Wang, Xinqiang
author_facet Liu, Fang
Yu, Ye
Zhang, Yuantao
Rong, Xin
Wang, Tao
Zheng, Xiantong
Sheng, Bowen
Yang, Liuyun
Wei, Jiaqi
Wang, Xuepeng
Li, Xianbin
Yang, Xuelin
Xu, Fujun
Qin, Zhixin
Zhang, Zhaohui
Shen, Bo
Wang, Xinqiang
author_sort Liu, Fang
collection PubMed
description Epitaxial growth of III‐nitrides on 2D materials enables the realization of flexible optoelectronic devices for next‐generation wearable applications. Unfortunately, it is difficult to obtain high‐quality III‐nitride epilayers on 2D materials such as hexagonal BN (h‐BN) due to different atom hybridizations. Here, the epitaxy of single‐crystalline GaN films on the chemically activated h‐BN/Al(2)O(3) substrates is reported, paying attention to interface atomic configuration. It is found that chemical‐activated h‐BN provides B—O—N and N—O bonds, where the latter ones act as effective artificial dangling bonds for following GaN nucleation, leading to Ga‐polar GaN films with a flat surface. The h‐BN is also found to be effective in modifying the compressive strain in GaN film and thus improves indium incorporation during the growth of InGaN quantum wells, resulting in the achievement of pure green light‐emitting diodes. This work provides an effective way for III‐nitrides epitaxy on h‐BN and a possible route to overcome the epitaxial bottleneck of high indium content III‐nitride light‐emitting devices.
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spelling pubmed-76102702020-11-09 Hexagonal BN‐Assisted Epitaxy of Strain Released GaN Films for True Green Light‐Emitting Diodes Liu, Fang Yu, Ye Zhang, Yuantao Rong, Xin Wang, Tao Zheng, Xiantong Sheng, Bowen Yang, Liuyun Wei, Jiaqi Wang, Xuepeng Li, Xianbin Yang, Xuelin Xu, Fujun Qin, Zhixin Zhang, Zhaohui Shen, Bo Wang, Xinqiang Adv Sci (Weinh) Communications Epitaxial growth of III‐nitrides on 2D materials enables the realization of flexible optoelectronic devices for next‐generation wearable applications. Unfortunately, it is difficult to obtain high‐quality III‐nitride epilayers on 2D materials such as hexagonal BN (h‐BN) due to different atom hybridizations. Here, the epitaxy of single‐crystalline GaN films on the chemically activated h‐BN/Al(2)O(3) substrates is reported, paying attention to interface atomic configuration. It is found that chemical‐activated h‐BN provides B—O—N and N—O bonds, where the latter ones act as effective artificial dangling bonds for following GaN nucleation, leading to Ga‐polar GaN films with a flat surface. The h‐BN is also found to be effective in modifying the compressive strain in GaN film and thus improves indium incorporation during the growth of InGaN quantum wells, resulting in the achievement of pure green light‐emitting diodes. This work provides an effective way for III‐nitrides epitaxy on h‐BN and a possible route to overcome the epitaxial bottleneck of high indium content III‐nitride light‐emitting devices. John Wiley and Sons Inc. 2020-09-27 /pmc/articles/PMC7610270/ /pubmed/33173724 http://dx.doi.org/10.1002/advs.202000917 Text en © 2020 The Authors. Published by Wiley‐VCH GmbH This is an open access article under the terms of the http://creativecommons.org/licenses/by/4.0/ License, which permits use, distribution and reproduction in any medium, provided the original work is properly cited.
spellingShingle Communications
Liu, Fang
Yu, Ye
Zhang, Yuantao
Rong, Xin
Wang, Tao
Zheng, Xiantong
Sheng, Bowen
Yang, Liuyun
Wei, Jiaqi
Wang, Xuepeng
Li, Xianbin
Yang, Xuelin
Xu, Fujun
Qin, Zhixin
Zhang, Zhaohui
Shen, Bo
Wang, Xinqiang
Hexagonal BN‐Assisted Epitaxy of Strain Released GaN Films for True Green Light‐Emitting Diodes
title Hexagonal BN‐Assisted Epitaxy of Strain Released GaN Films for True Green Light‐Emitting Diodes
title_full Hexagonal BN‐Assisted Epitaxy of Strain Released GaN Films for True Green Light‐Emitting Diodes
title_fullStr Hexagonal BN‐Assisted Epitaxy of Strain Released GaN Films for True Green Light‐Emitting Diodes
title_full_unstemmed Hexagonal BN‐Assisted Epitaxy of Strain Released GaN Films for True Green Light‐Emitting Diodes
title_short Hexagonal BN‐Assisted Epitaxy of Strain Released GaN Films for True Green Light‐Emitting Diodes
title_sort hexagonal bn‐assisted epitaxy of strain released gan films for true green light‐emitting diodes
topic Communications
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7610270/
https://www.ncbi.nlm.nih.gov/pubmed/33173724
http://dx.doi.org/10.1002/advs.202000917
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