Cargando…

Hexagonal BN‐Assisted Epitaxy of Strain Released GaN Films for True Green Light‐Emitting Diodes

Epitaxial growth of III‐nitrides on 2D materials enables the realization of flexible optoelectronic devices for next‐generation wearable applications. Unfortunately, it is difficult to obtain high‐quality III‐nitride epilayers on 2D materials such as hexagonal BN (h‐BN) due to different atom hybridi...

Descripción completa

Detalles Bibliográficos
Autores principales:	Liu, Fang, Yu, Ye, Zhang, Yuantao, Rong, Xin, Wang, Tao, Zheng, Xiantong, Sheng, Bowen, Yang, Liuyun, Wei, Jiaqi, Wang, Xuepeng, Li, Xianbin, Yang, Xuelin, Xu, Fujun, Qin, Zhixin, Zhang, Zhaohui, Shen, Bo, Wang, Xinqiang
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	John Wiley and Sons Inc. 2020
Materias:	Communications
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7610270/ https://www.ncbi.nlm.nih.gov/pubmed/33173724 http://dx.doi.org/10.1002/advs.202000917

Ejemplares similares

Epitaxial Growth of GaN on Magnetron Sputtered AlN/Hexagonal BN/Sapphire Substrates
por: Wu, Jinxing, et al.
Publicado: (2020)

Demonstration of epitaxial growth of strain-relaxed GaN films on graphene/SiC substrates for long wavelength light-emitting diodes
por: Yu, Ye, et al.
Publicado: (2021)

Exciton emission of quasi-2D InGaN in GaN matrix grown by molecular beam epitaxy
por: Ma, Dingyu, et al.
Publicado: (2017)

Hexagonal Boron Nitride as an Intermediate Layer for Gallium Nitride Epitaxial Growth in Near-Ultraviolet Light-Emitting Diodes
por: Park, Ah-Hyun, et al.
Publicado: (2023)

Metal organic vapour-phase epitaxy growth of GaN wires on Si (111) for light-emitting diode applications
por: Salomon, Damien, et al.
Publicado: (2013)

Sub-nanometer ultrathin epitaxy of AlGaN and its application in efficient doping
por: Wang, Jiaming, et al.
Publicado: (2022)

High‐Mobility Two‐Dimensional Electron Gas at InGaN/InN Heterointerface Grown by Molecular Beam Epitaxy
por: Wang, Tao, et al.
Publicado: (2018)

GaN-Based Resonant-Cavity Light-Emitting Diodes Grown on Si
por: Chen, Wen, et al.
Publicado: (2021)

Thermophysical Characterization of Efficiency Droop in GaN-Based Light-Emitting Diodes
por: Nee, Tzer-En, et al.
Publicado: (2021)

Toward h-BN/GaN Schottky Diodes: Spectroscopic Study on the Electronic Phenomena at the Interface
por: Zdanowicz, Ewelina, et al.
Publicado: (2022)

Electrically driven, highly efficient three-dimensional GaN-based light emitting diodes fabricated by self-aligned twofold epitaxial lateral overgrowth
por: Yoo, Yang-Seok, et al.
Publicado: (2017)

Fabrication and characterization of GaN-based light-emitting diodes without pre-activation of p-type GaN
por: Hu, Xiao-Long, et al.
Publicado: (2015)

Hybrid Device of Blue GaN Light-Emitting Diodes and Organic Light-Emitting Diodes with Color Tunability for Smart Lighting Sources
por: Weng, Yalian, et al.
Publicado: (2022)

Ultraviolet GaN Light-Emitting Diodes with Porous-AlGaN Reflectors
por: Fan, Feng-Hsu, et al.
Publicado: (2017)

InGaN/GaN multilayer quantum dots yellow-green light-emitting diode with optimized GaN barriers
por: Lv, Wenbin, et al.
Publicado: (2012)

Efficiency Models for GaN-Based Light-Emitting Diodes: Status and Challenges
por: Piprek, Joachim
Publicado: (2020)

Optical Properties of GaN-Based Green Light-Emitting Diodes Influenced by Low-Temperature p-GaN Layer
por: Li, Jianfei, et al.
Publicado: (2021)

Large-roll growth of 25-inch hexagonal BN monolayer film for self-release buffer layer of free-standing GaN wafer
por: Wu, Chenping, et al.
Publicado: (2016)

Enhanced performance of photonic crystal GaN light-emitting diodes with graphene transparent electrodes
por: Ge, Hai-Liang, et al.
Publicado: (2015)

Efficiency of True-Green Light Emitting Diodes: Non-Uniformity and Temperature Effects
por: Titkov, Ilya E., et al.
Publicado: (2017)

Substrate-Free InGaN/GaN Nanowire Light-Emitting Diodes
por: Neplokh, Vladimir, et al.
Publicado: (2015)

Pathway Towards High-Efficiency Eu-doped GaN Light-Emitting Diodes
por: Fragkos, Ioannis E., et al.
Publicado: (2017)

Effects of Nanoscale V-Shaped Pits on GaN-Based Light Emitting Diodes
por: Chen, Shuo-Wei, et al.
Publicado: (2017)

Remote heteroepitaxy of GaN microrod heterostructures for deformable light-emitting diodes and wafer recycle
por: Jeong, Junseok, et al.
Publicado: (2020)

Focus on perovskite emitters in blue light-emitting diodes
por: Yang, Xiaoyu, et al.
Publicado: (2023)

Subwavelength-scale nanorods implemented hexagonal pyramids structure as efficient light-extraction in Light-emitting diodes
por: Park, Jae Yong, et al.
Publicado: (2020)

Modelling of proton irradiated GaN-based high-power white light-emitting diodes
por: Floriduz, Alessandro, et al.
Publicado: (2018)

White Electroluminescence Using ZnO Nanotubes/GaN Heterostructure Light-Emitting Diode
por: Sadaf, JR, et al.
Publicado: (2010)

Origin of the Electroluminescence from Annealed-ZnO/GaN Heterojunction Light-Emitting Diodes
por: Hsu, Kai-Chiang, et al.
Publicado: (2015)

Novel patterned sapphire substrates for enhancing the efficiency of GaN-based light-emitting diodes
por: Chao, Szu-Han, et al.
Publicado: (2020)

Quantum dot-integrated GaN light-emitting diodes with resolution beyond the retinal limit
por: Bae, Junho, et al.
Publicado: (2022)

Mechanism of stress-driven composition evolution during hetero-epitaxy in a ternary AlGaN system
por: He, Chenguang, et al.
Publicado: (2016)

High-quality AlN epitaxy on nano-patterned sapphire substrates prepared by nano-imprint lithography
por: Zhang, Lisheng, et al.
Publicado: (2016)

Epitaxial Growth and Characterization of AlInN-Based Core-Shell Nanowire Light Emitting Diodes Operating in the Ultraviolet Spectrum
por: Velpula, Ravi Teja, et al.
Publicado: (2020)

Effect of Same-Temperature GaN Cap Layer on the InGaN/GaN Multiquantum Well of Green Light-Emitting Diode on Silicon Substrate
por: Zheng, Changda, et al.
Publicado: (2013)

120 GHz Frequency-Doubler Module Based on GaN Schottky Barrier Diode
por: Liu, Honghui, et al.
Publicado: (2022)

In-situ epitaxial growth of graphene/h-BN van der Waals heterostructures by molecular beam epitaxy
por: Zuo, Zheng, et al.
Publicado: (2015)

Growth of high quality and uniformity AlGaN/GaN heterostructures on Si substrates using a single AlGaN layer with low Al composition
por: Cheng, Jianpeng, et al.
Publicado: (2016)

A Direct Epitaxial Approach To Achieving Ultrasmall and Ultrabright InGaN Micro Light-Emitting Diodes (μLEDs)
por: Bai, Jie, et al.
Publicado: (2020)

Less strained and more efficient GaN light-emitting diodes with embedded silica hollow nanospheres
por: Kim, Jonghak, et al.
Publicado: (2013)

Cannot write session to /tmp/vufind_sessions/sess_e2vp55oh0rd4rv8f17u8tcvk68