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Resistive switching in diamondoid thin films

The electrical transport properties of a thin film of the diamondoid adamantane, deposited on an Au/W substrate, were investigated experimentally. The current I, in applied potential V, from the admantane-thiol/metal heterstructure to a wire lead on its surface exhibited non-symmetric (diode-like) c...

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Autores principales: Jantayod, A., Doonyapisut, D., Eknapakul, T., Smith, M. F., Meevasana, W.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2020
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7642435/
https://www.ncbi.nlm.nih.gov/pubmed/33149239
http://dx.doi.org/10.1038/s41598-020-76093-3
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author Jantayod, A.
Doonyapisut, D.
Eknapakul, T.
Smith, M. F.
Meevasana, W.
author_facet Jantayod, A.
Doonyapisut, D.
Eknapakul, T.
Smith, M. F.
Meevasana, W.
author_sort Jantayod, A.
collection PubMed
description The electrical transport properties of a thin film of the diamondoid adamantane, deposited on an Au/W substrate, were investigated experimentally. The current I, in applied potential V, from the admantane-thiol/metal heterstructure to a wire lead on its surface exhibited non-symmetric (diode-like) characteristics and a signature of resistive switching (RS), an effect that is valuable to non-volatile memory applications. I(V) follows a hysteresis curve that passes twice through [Formula: see text] linearly, indicating RS between two states with significantly different conductances, possibly due to an exotic mechanism.
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spelling pubmed-76424352020-11-06 Resistive switching in diamondoid thin films Jantayod, A. Doonyapisut, D. Eknapakul, T. Smith, M. F. Meevasana, W. Sci Rep Article The electrical transport properties of a thin film of the diamondoid adamantane, deposited on an Au/W substrate, were investigated experimentally. The current I, in applied potential V, from the admantane-thiol/metal heterstructure to a wire lead on its surface exhibited non-symmetric (diode-like) characteristics and a signature of resistive switching (RS), an effect that is valuable to non-volatile memory applications. I(V) follows a hysteresis curve that passes twice through [Formula: see text] linearly, indicating RS between two states with significantly different conductances, possibly due to an exotic mechanism. Nature Publishing Group UK 2020-11-04 /pmc/articles/PMC7642435/ /pubmed/33149239 http://dx.doi.org/10.1038/s41598-020-76093-3 Text en © The Author(s) 2020 Open AccessThis article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons licence, and indicate if changes were made. The images or other third party material in this article are included in the article's Creative Commons licence, unless indicated otherwise in a credit line to the material. If material is not included in the article's Creative Commons licence and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this licence, visit http://creativecommons.org/licenses/by/4.0/.
spellingShingle Article
Jantayod, A.
Doonyapisut, D.
Eknapakul, T.
Smith, M. F.
Meevasana, W.
Resistive switching in diamondoid thin films
title Resistive switching in diamondoid thin films
title_full Resistive switching in diamondoid thin films
title_fullStr Resistive switching in diamondoid thin films
title_full_unstemmed Resistive switching in diamondoid thin films
title_short Resistive switching in diamondoid thin films
title_sort resistive switching in diamondoid thin films
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7642435/
https://www.ncbi.nlm.nih.gov/pubmed/33149239
http://dx.doi.org/10.1038/s41598-020-76093-3
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