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Characterization and Fabrication of the CFM-JTE for 4H-SiC Power Device with High-Efficiency Protection and Increased JTE Dose Tolerance Window

A 13.5 kV 4H-SiC PiN rectifier with a considerable active area of 0.1 cm(2) is fabricated in this paper. Charge-field-modulated junction termination extension (CFM-JTE) has been proposed for satisfying the requirement of ultra-high reverse voltage, which enlarges the JTE dose tolerance window, makin...

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Autores principales: Wen, Yi, Xu, Xiao-jie, Tao, Meng-ling, Lu, Xiao-fei, Deng, Xiao-chuan, Li, Xuan, Li, Jun-tao, Li, Zhi-qiang, Zhang, Bo
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2020
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7655890/
https://www.ncbi.nlm.nih.gov/pubmed/33170390
http://dx.doi.org/10.1186/s11671-020-03443-5
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author Wen, Yi
Xu, Xiao-jie
Tao, Meng-ling
Lu, Xiao-fei
Deng, Xiao-chuan
Li, Xuan
Li, Jun-tao
Li, Zhi-qiang
Zhang, Bo
author_facet Wen, Yi
Xu, Xiao-jie
Tao, Meng-ling
Lu, Xiao-fei
Deng, Xiao-chuan
Li, Xuan
Li, Jun-tao
Li, Zhi-qiang
Zhang, Bo
author_sort Wen, Yi
collection PubMed
description A 13.5 kV 4H-SiC PiN rectifier with a considerable active area of 0.1 cm(2) is fabricated in this paper. Charge-field-modulated junction termination extension (CFM-JTE) has been proposed for satisfying the requirement of ultra-high reverse voltage, which enlarges the JTE dose tolerance window, making it approximately 2.8 times that of the conventional two-zone JTE. Besides, the CFM-JTE can be implemented through the conventional two-zone JTE process. The measured forward current is up to 100 A @ V(F) = 5.2 V in the absence of carrier lifetime enhancement technology. The CFM-JTE structure accomplishes 96% of the theoretical breakdown voltage of the parallel plane junction with a relatively small terminal area of 400 μm, which contributes to achieving the Baliga’s figure of merit of 58.8 GW/cm(2).
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spelling pubmed-76558902020-11-12 Characterization and Fabrication of the CFM-JTE for 4H-SiC Power Device with High-Efficiency Protection and Increased JTE Dose Tolerance Window Wen, Yi Xu, Xiao-jie Tao, Meng-ling Lu, Xiao-fei Deng, Xiao-chuan Li, Xuan Li, Jun-tao Li, Zhi-qiang Zhang, Bo Nanoscale Res Lett Nano Express A 13.5 kV 4H-SiC PiN rectifier with a considerable active area of 0.1 cm(2) is fabricated in this paper. Charge-field-modulated junction termination extension (CFM-JTE) has been proposed for satisfying the requirement of ultra-high reverse voltage, which enlarges the JTE dose tolerance window, making it approximately 2.8 times that of the conventional two-zone JTE. Besides, the CFM-JTE can be implemented through the conventional two-zone JTE process. The measured forward current is up to 100 A @ V(F) = 5.2 V in the absence of carrier lifetime enhancement technology. The CFM-JTE structure accomplishes 96% of the theoretical breakdown voltage of the parallel plane junction with a relatively small terminal area of 400 μm, which contributes to achieving the Baliga’s figure of merit of 58.8 GW/cm(2). Springer US 2020-11-10 /pmc/articles/PMC7655890/ /pubmed/33170390 http://dx.doi.org/10.1186/s11671-020-03443-5 Text en © The Author(s) 2020 Open AccessThis article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons licence, and indicate if changes were made. The images or other third party material in this article are included in the article's Creative Commons licence, unless indicated otherwise in a credit line to the material. If material is not included in the article's Creative Commons licence and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this licence, visit http://creativecommons.org/licenses/by/4.0/.
spellingShingle Nano Express
Wen, Yi
Xu, Xiao-jie
Tao, Meng-ling
Lu, Xiao-fei
Deng, Xiao-chuan
Li, Xuan
Li, Jun-tao
Li, Zhi-qiang
Zhang, Bo
Characterization and Fabrication of the CFM-JTE for 4H-SiC Power Device with High-Efficiency Protection and Increased JTE Dose Tolerance Window
title Characterization and Fabrication of the CFM-JTE for 4H-SiC Power Device with High-Efficiency Protection and Increased JTE Dose Tolerance Window
title_full Characterization and Fabrication of the CFM-JTE for 4H-SiC Power Device with High-Efficiency Protection and Increased JTE Dose Tolerance Window
title_fullStr Characterization and Fabrication of the CFM-JTE for 4H-SiC Power Device with High-Efficiency Protection and Increased JTE Dose Tolerance Window
title_full_unstemmed Characterization and Fabrication of the CFM-JTE for 4H-SiC Power Device with High-Efficiency Protection and Increased JTE Dose Tolerance Window
title_short Characterization and Fabrication of the CFM-JTE for 4H-SiC Power Device with High-Efficiency Protection and Increased JTE Dose Tolerance Window
title_sort characterization and fabrication of the cfm-jte for 4h-sic power device with high-efficiency protection and increased jte dose tolerance window
topic Nano Express
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7655890/
https://www.ncbi.nlm.nih.gov/pubmed/33170390
http://dx.doi.org/10.1186/s11671-020-03443-5
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