Characterization and Fabrication of the CFM-JTE for 4H-SiC Power Device with High-Efficiency Protection and Increased JTE Dose Tolerance Window

A 13.5 kV 4H-SiC PiN rectifier with a considerable active area of 0.1 cm(2) is fabricated in this paper. Charge-field-modulated junction termination extension (CFM-JTE) has been proposed for satisfying the requirement of ultra-high reverse voltage, which enlarges the JTE dose tolerance window, makin...

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Detalles Bibliográficos
Autores principales: Wen, Yi, Xu, Xiao-jie, Tao, Meng-ling, Lu, Xiao-fei, Deng, Xiao-chuan, Li, Xuan, Li, Jun-tao, Li, Zhi-qiang, Zhang, Bo
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2020
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7655890/
https://www.ncbi.nlm.nih.gov/pubmed/33170390
http://dx.doi.org/10.1186/s11671-020-03443-5

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7655890/
https://www.ncbi.nlm.nih.gov/pubmed/33170390
http://dx.doi.org/10.1186/s11671-020-03443-5

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