Effects of top electrode material in hafnium-oxide-based memristive systems on highly-doped Si

This work provides useful insights into the development of HfO(2)-based memristive systems with a p-type silicon bottom electrode that are compatible with the complementary metal–oxide–semiconductor technology. The results obtained reveal the importance of the top electrode selection to achieve uniq...

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Detalles Bibliográficos
Autores principales: Saylan, Sueda, Aldosari, Haila M., Humood, Khaled, Abi Jaoude, Maguy, Ravaux, Florent, Mohammad, Baker
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2020
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7658356/
https://www.ncbi.nlm.nih.gov/pubmed/33177566
http://dx.doi.org/10.1038/s41598-020-76333-6

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7658356/
https://www.ncbi.nlm.nih.gov/pubmed/33177566
http://dx.doi.org/10.1038/s41598-020-76333-6

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