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Effects of top electrode material in hafnium-oxide-based memristive systems on highly-doped Si
This work provides useful insights into the development of HfO(2)-based memristive systems with a p-type silicon bottom electrode that are compatible with the complementary metal–oxide–semiconductor technology. The results obtained reveal the importance of the top electrode selection to achieve uniq...
| Autores principales: | , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Nature Publishing Group UK
2020
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7658356/ https://www.ncbi.nlm.nih.gov/pubmed/33177566 http://dx.doi.org/10.1038/s41598-020-76333-6 |