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A band-gap database for semiconducting inorganic materials calculated with hybrid functional
Semiconducting inorganic materials with band gaps ranging between 0 and 5 eV constitute major components in electronic, optoelectronic and photovoltaic devices. Since the band gap is a primary material property that affects the device performance, large band-gap databases are useful in selecting opt...
Autores principales: | , , , , , , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group UK
2020
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7658987/ https://www.ncbi.nlm.nih.gov/pubmed/33177500 http://dx.doi.org/10.1038/s41597-020-00723-8 |
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author | Kim, Sangtae Lee, Miso Hong, Changho Yoon, Youngchae An, Hyungmin Lee, Dongheon Jeong, Wonseok Yoo, Dongsun Kang, Youngho Youn, Yong Han, Seungwu |
author_facet | Kim, Sangtae Lee, Miso Hong, Changho Yoon, Youngchae An, Hyungmin Lee, Dongheon Jeong, Wonseok Yoo, Dongsun Kang, Youngho Youn, Yong Han, Seungwu |
author_sort | Kim, Sangtae |
collection | PubMed |
description | Semiconducting inorganic materials with band gaps ranging between 0 and 5 eV constitute major components in electronic, optoelectronic and photovoltaic devices. Since the band gap is a primary material property that affects the device performance, large band-gap databases are useful in selecting optimal materials in each application. While there exist several band-gap databases that are theoretically compiled by density-functional-theory calculations, they suffer from computational limitations such as band-gap underestimation and metastable magnetism. In this data descriptor, we present a computational database of band gaps for 10,481 materials compiled by applying a hybrid functional and considering the stable magnetic ordering. For benchmark materials, the root-mean-square error in reference to experimental data is 0.36 eV, significantly smaller than 0.75–1.05 eV in the existing databases. Furthermore, we identify many small-gap materials that are misclassified as metals in other databases. By providing accurate band gaps, the present database will be useful in screening materials in diverse applications. |
format | Online Article Text |
id | pubmed-7658987 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2020 |
publisher | Nature Publishing Group UK |
record_format | MEDLINE/PubMed |
spelling | pubmed-76589872020-11-17 A band-gap database for semiconducting inorganic materials calculated with hybrid functional Kim, Sangtae Lee, Miso Hong, Changho Yoon, Youngchae An, Hyungmin Lee, Dongheon Jeong, Wonseok Yoo, Dongsun Kang, Youngho Youn, Yong Han, Seungwu Sci Data Data Descriptor Semiconducting inorganic materials with band gaps ranging between 0 and 5 eV constitute major components in electronic, optoelectronic and photovoltaic devices. Since the band gap is a primary material property that affects the device performance, large band-gap databases are useful in selecting optimal materials in each application. While there exist several band-gap databases that are theoretically compiled by density-functional-theory calculations, they suffer from computational limitations such as band-gap underestimation and metastable magnetism. In this data descriptor, we present a computational database of band gaps for 10,481 materials compiled by applying a hybrid functional and considering the stable magnetic ordering. For benchmark materials, the root-mean-square error in reference to experimental data is 0.36 eV, significantly smaller than 0.75–1.05 eV in the existing databases. Furthermore, we identify many small-gap materials that are misclassified as metals in other databases. By providing accurate band gaps, the present database will be useful in screening materials in diverse applications. Nature Publishing Group UK 2020-11-11 /pmc/articles/PMC7658987/ /pubmed/33177500 http://dx.doi.org/10.1038/s41597-020-00723-8 Text en © The Author(s) 2020 Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/. The Creative Commons Public Domain Dedication waiver http://creativecommons.org/publicdomain/zero/1.0/ applies to the metadata files associated with this article. |
spellingShingle | Data Descriptor Kim, Sangtae Lee, Miso Hong, Changho Yoon, Youngchae An, Hyungmin Lee, Dongheon Jeong, Wonseok Yoo, Dongsun Kang, Youngho Youn, Yong Han, Seungwu A band-gap database for semiconducting inorganic materials calculated with hybrid functional |
title | A band-gap database for semiconducting inorganic materials calculated with hybrid functional |
title_full | A band-gap database for semiconducting inorganic materials calculated with hybrid functional |
title_fullStr | A band-gap database for semiconducting inorganic materials calculated with hybrid functional |
title_full_unstemmed | A band-gap database for semiconducting inorganic materials calculated with hybrid functional |
title_short | A band-gap database for semiconducting inorganic materials calculated with hybrid functional |
title_sort | band-gap database for semiconducting inorganic materials calculated with hybrid functional |
topic | Data Descriptor |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC7658987/ https://www.ncbi.nlm.nih.gov/pubmed/33177500 http://dx.doi.org/10.1038/s41597-020-00723-8 |
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